Patents by Inventor Timothy J. Bettles

Timothy J. Bettles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor heterostructures and related methods
    Patent number: 8222650
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: July 17, 2012
    Assignee: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack
  • In-line Fluid Treatment by UV Radiation
    Publication number: 20100314551
    Abstract: A UV source is regulated according to one or more purification parameters to produce a desired germicidal effect in a liquid while minimizing wasted power.
    Type: Application
    Filed: June 10, 2010
    Publication date: December 16, 2010
    Inventors: Timothy J. Bettles, Steven Berger, Sandra B. Schujman, Leo J. Schowalter
  • NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
    Publication number: 20100135349
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Application
    Filed: November 12, 2009
    Publication date: June 3, 2010
    Applicant: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack
  • Nitride semiconductor heterostructures and related methods
    Patent number: 7638346
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Grant
    Filed: August 14, 2006
    Date of Patent: December 29, 2009
    Assignee: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack
  • NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
    Publication number: 20090283028
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Application
    Filed: August 14, 2006
    Publication date: November 19, 2009
    Applicant: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack