Abstract: This disclosure provides systems, methods and apparatus for reducing undesired capacitance and electrostatic attraction among components of electromechanical systems (EMS) displays. An apparatus includes an array of display elements, a control matrix, and an electric insulation layer. The display elements each include a movable light blocking component coupled to a conductive beam.

Abstract: A device includes an array of devices formed on a first substrate. A second substrate is spaced away from the first substrate such that the array of devices are positioned between the first and second substrates. A plurality of spacers are coupled to the first substrate to maintain at least a minimum gap between the first substrate and the second substrate. The plurality of spacers include a first set of spacers and a second set of spacers. The spacers in the first set of spacers are shorter than the spacers in the second set of spacers. In some implementations, the device is a display device and the MEMS devices are modulators.

Abstract: The invention relates to a light modulator including a substrate having a surface and a modulation assembly coupled to the substrate that includes a modulation element and a first compliant beam. The first compliant beam includes a first segment that extend away from a first anchor and a second segment that extends back towards the first anchor. The length of the first segment is different than the length of the second segment.

Abstract: A display apparatus includes a backlight and an aperture layer that is positioned in front of the backlight and defines a plurality of apertures. The display apparatus also includes a microelectromechanical system (MEMS) light modulator configured to modulate light emitted by the backlight passing through the apertures to form an image on the display apparatus. The MEMS light modulator includes a shutter that has a light blocking portion having an aperture layer-facing surface and a front-facing surface and at least one depression formed in the light blocking portion. The width of the at least one depression accounts for at least 50% but less than 100% of a distance separating two edges of the shutter.

Abstract: The invention relates to a spatial light modulator including a substrate having a surface and a modulation assembly coupled to the substrate including a modulation element and a compliant beam. The modulation assembly is configured to limit the bending of the compliant beam towards an opposing surface that would otherwise be caused by inherent stresses within the compliant beam. The invention also relates to a method of manufacturing a spatial light modulator including the steps of forming and releasing a modulation assembly that has a modulation element and a compliant beam formed in a pre-release position to have an intended inherent stress state. As a result of the stress state in the compliant beam, upon release of the compliant beam, the compliant beam bends into a rest position which is different than the pre-release position, where the rest position is based in part on the intended inherent stress state.

Abstract: A display for imaging includes an aperture layer and a set of light modulators. The aperture layer includes a light absorbing layer disposed over a light reflecting layer, each layer having a set of apertures defined therein. The light absorbing layer includes light absorbing material suspended in a photosensitive resin. The set of light modulators are for modulating light passing through the apertures defined in the aperture layer.

Abstract: Display devices incorporating shutter-based light modulators are disclosed along with methods of manufacturing such devices. The methods are compatible with thin-film manufacturing processes known in the art and result in displays having lower power-consumption.

Abstract: The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.

Abstract: A display apparatus includes a first substrate, a plurality of microelectromechanical systems (MEMS) light modulators formed from a structural material coupled to the first substrate and a second substrate separated from the first substrate. A plurality of spacers extend from the first substrate to keep the second substrate a minimum distance away from the plurality of light modulators. The spacers include a first polymer layer having a surface in contact with the first substrate, a second polymer layer encapsulating the first polymer layer and a layer of the structural material encapsulating the second polymer layer. The spacers can be used as fluid barriers and configured to surround more than one but less than all of the MEMS light modulators in the display apparatus.

Abstract: A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.

Abstract: A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.

Abstract: A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.

Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.

Abstract: Display devices incorporating shutter-based light modulators are disclosed along with methods of manufacturing such devices. The methods are compatible with thin-film manufacturing processes known in the art and result in displays having lower power-consumption.

Abstract: The invention relates, in various aspects, to systems and methods for MEMS actuated displays that can be driven at high speeds and at low voltages for improved image quality and reduced power consumption.

Abstract: Display devices incorporating shutter-based light modulators are disclosed along with methods of manufacturing such devices. The methods are compatible with thin-film manufacturing processes known in the art and result in displays having lower power-consumption.

Abstract: A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.

Abstract: A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.

Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.

Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.