Abstract: A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.

Abstract: A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.

Abstract: A physical vapor deposition process for maintaining the wafer below a critical temperature. The rate at which material particles are sputtered from the target and thus deposited on the wafer is controllable in response to power supplied to the target. Maintaining a desired deposition rate maintains the wafer temperature below the critical temperature.

Abstract: A method and apparatus for depositing material from a target onto a semiconductor wafer. The wafer is positioned above a chuck that is heated by a chuck heater. Radiant heat flow from the chuck to the wafer is the primary heat source for the wafer. Thus by controlling the chuck heater temperature the wafer temperature can be maintained within a desired range to effectuate desired characteristics in the deposited material.

Abstract: A pedestal cover for a semiconductor wafer. The wafer is positioned overlying the pedestal cover in a material deposition chamber, with the cover defining a peripheral circumferential trench therein. During the material deposition process, deposited material is formed within the trench and the build up of material adjacent a peripheral edge of the wafer is thereby avoided.

Abstract: The present invention provides a method of roughing a metallic surface. In one embodiment, the method includes the steps of positioning a pressurized grit source a predetermined distance from and at an angle substantially perpendicular to the metallic surface of the object that is to be roughened, projecting grit from the pressurized grit source against the metallic surface, forming a grit impact area, which in certain embodiments may be seven inches square, on the metallic surface, and moving the pressurized grit source from the grit impact area after an amount of time that ranges from about three seconds to about eight seconds.