Abstract: The present invention enables efficient microfabrication of a fully integrated liquid crystal display device. Initially, a sacrificial layer is formed on a substrate that has conductive pads connected thereto. The sacrificial layer is patterned, and portions of the sacrificial layer are removed to expose portions of the underlying layer supporting the sacrificial layer. Then, a permeable layer is formed on the sacrificial layer, thereby filling in the space vacated by the removed potions of the sacrificial layer. The structure is heated and the material of the sacrificial layer is allowed to dissolve into and dissipate through the permeable layer in order to leave a cavity. Once the sacrificial layer is removed, the permeable layer is supported by the portion of the permeable layer filling in the space vacated by the removed portions of the sacrificial layer.

Abstract: The present invention enables efficient microfabrication of a fully integrated liquid crystal display device. Initially, a sacrificial layer is formed on a substrate that has conductive pads connected thereto. The sacrificial layer is patterned, and portions of the sacrificial layer are removed to expose portions of the underlying layer supporting the sacrificial layer. Then, a permeable layer is formed on the sacrificial layer, thereby filling in the space vacated by the removed potions of the sacrificial layer. The structure is heated and the material of the sacrificial layer is allowed to dissolve into and dissipate through the permeable layer in order to leave a cavity. Once the sacrificial layer is removed, the permeable layer is supported by the portion of the permeable layer filling in the space vacated by the removed portions of the sacrificial layer.

Abstract: Novel processes and apparatus permit lift-off, alignment, and bonding of materials and devices. The processes involve first depositing a device layer on a sacrifical layer situated on a growth substrate. A device may be defined in the device layer. The device layer or the device is coated with a carrier layer. The sacrificial layer and/or the growth substrate are then etched away to release the combination of the device layer and the carrier layer from the growth substrate. The device layer or device can then be aligned and selectively bonded to a host substrate. Other processes and apparatus are set forth for facilitating lift-off, bonding, handling, and patterning of he device layer or device.

Abstract: Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lift off, alignment, and deposition onto a host substrate. One process involves the following steps. An epitaxial layer(s) is deposited on a sacrificial layer situated on a growth substrate. Device layers may be defined in the epitaxial layer. All exposed sides of the epitaxial layer is coated with a transparent carrier layer. The sacrificial layer is then etched away to release the combination of the epitaxial layer and the transparent carrier layer from the growth substrate. The epitaxial layer can then be aligned and selectively deposited onto a host substrate. Finally, the transparent carrier layer is removed, thereby leaving the epitaxial layer on the host substrate. An alternative process involves substantially the same methodology as the foregoing process except that the growth substrate is etched away before the sacrificial layer.