Abstract: A process for producing an olefin-based polymer in a polymerization reactor including a fluidized bed, a disengaging section and a neck connecting the bed and disengaging section, at least one monomer, in the gas phase, in the presence of at least one catalyst containing at least two transition metals, one of the at least two transition metals being Ti, at least one cocatalyst, a composition having at least one compound selected from formula (I), and/or at least one compound selected from formula (II): (R1CO2)2AlOH (I), (R2)xN(R3OH)y (II); wherein R1 is a hydrocarbon radical containing from 13 to 25 carbons; R2 is a hydrocarbon radical containing from 14 to 26 carbons; R3 is a hydrocarbon radical containing from 1 to 4 carbons; and x+y=3, and x has a value of 1 or 2; and wherein the reactor is operated in a condensed mode and the average height of the fluidized bed is maintained above the neck of the polymerization reactor is provided. The reaction product of the process is also provided.

Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Abstract: A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention uses a superhard protective layer such as DLC or TiW deposited over the partially fabricated device prior to a partial-saw. This superhard protective layer reduces the generation of defects in the underlying photoresist layers, and allows a wet chemical HF acid to etch away particles and damage of the underlying oxide edges. A 6% BHF solution can be utilized. The present invention substantially improves the yield of micromechanical devices.

Abstract: An apparatus (304) and method is provided for bonding wire (104) to bond sites (108) of integrated circuits (110), lead frames, and packages at room temperatures. In preferred embodiments a ball end (106) of a gold wire (104) is bonded to an aluminum bond pad (108). Apparatus (304) includes a high frequency ultrasonic energy source (306) designed to provide ultrasonic energy at frequencies above 200 kHz. The ultrasonic energy is transmitted to the bonding interface via capillary (302). In this manner, a strong bond is formed between ball end (106) and bonding site (108). The apparatus and method provided enable bonds of sufficient shear strength to be fabricated in a sufficiently short bonding time even at ambient temperatures, enabling the efficient fabrication of temperature sensitive devices such as micromechanical structures.

Abstract: A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention comprises choosing compatible photoresist layers to avoid generating defects in the layers of photoresist which could allow a wet chemical HF acid etch process to damage an underlying micromechanical device. The present invention allows a very strong solution of hydrofluoric acid to be utilized to remove particles and debris after a partial-saw process, and to remove a damaged portion of an underlying CMOS layer (22) at a region (68) proximate a kerf (62). Using an HF solution having a concentration of about 6% is desired. The present invention substantially improves the yield of micromechanical devices.

Abstract: A method for bonding a metal wire (17) to a metal bond site (16) utilizes an ultrasonic power source (12) that is at approximately 162 KHz. A mash force is applied from a pressure source (13) during bonding. A metal exchange takes place between the metal wire (17) and the bond site (16) during the application of the ultrasonic power to produce a strong bond between the metal wire (17) and the bond site (16).

Abstract: In combination with the Network Application Platform (NAP), a Speech Interface to NAP (SPIN) creates or modifies a SPIN application for each language in which the prompts of a Network Application deployed on NAP are to be spoken. A prompt is mapped into a sequence of static and dynamic elements. Each SPIN application owns the prompt mappings, elements and element voice for the prompts to be played. The Network Application issues a PEP command to a Prompt Expansion Processor (PEP) to play an identified prompt in a language identified by a SPIN application ID. The command supplies the dynamic data to be played at the positions of the dynamic elements in the prompt definition PEP expands the command into a sequence of NAP Message IDs to play the sequence of NAP voice messages corresponding to the static and dynamic elements of the prompt mapping. The dynamic data is categorized into dynamic element types.