Abstract: An integrated optical chip device for molecular diagnostics comprising a tunable laser cavity sensor chip using heterodyned detection at the juncture of a sensor laser and a reference laser, and including a microfluid chip to which the sensor chip is flip-chip bonded to form a sample chamber that includes exposed evanescent field material of the tunable laser cavity to which fluid to be diagnosed is directed.

Abstract: An integrated optical chip device for molecular diagnostics comprising a tunable laser cavity sensor chip using heterodyned detection at the juncture of a sensor laser and a reference laser, and including a microfluid chip to which the sensor chip is flip-chip bonded to form a sample chamber that includes exposed evanescent field material of the tunable laser cavity to which fluid to be diagnosed is directed.

Abstract: A method for selectively heating a film on a substrate. The film is provided with a different absorption characteristic for light than the absorption characteristic of the substrate. The specimen (combined film and substrate) is illuminated by light having a maximum intensity at a wavelength which will be substantially absorbed by the film and substantially not absorbed by the substrate.

Abstract: A method for rapidly curing a film on a substrate by selective heating, causing it to cure from the inside out. This is accomplished by illuminating the sample with a light source having a peak wavelength which will be primarily absorbed by the underlying substrate and is transparent to the overlying film. Thus the substrate will be selectively heated first by direct absorption of the radiation, and the film to be cured will in turn be heated by conduction from the substrate. In this way, the film will be cured from the interior interface to the surface, or from the inside-out.

Abstract: An long arc gas-discharge lamp for rapidly heating a semiconductor wafer. The spectral output of the lamp is specifically matched to the absorption characteristics of the particular semiconductor wafer being heating by choosing an appropriate gas or mixture of gases. The electrodes of the long arc lamp are separated by a distance greater than the largest dimension of the semiconductor wafer to insure that the entire wafer is illuminated at one time. In addition, the lamp has a high power density to raise the temperature of the semiconductor wafer to the required process temperature. Large diameter metal electrodes are used to conduct more heat from the ends of the lamp. The electrodes contain a low work function metal such as thorium oxide to increase the electron emission. The enclosing glass capillary has thin walls between the electrodes for improved heat dissipation. The glass capillary is cooled to carry the heat away from the lamp.