Patents by Inventor Timothy James Thurgate

Timothy James Thurgate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6236596
    Abstract: A method and apparatus for reducing band-to-band currents during the erasure of a flash EEPROM memory cell is provided. The apparatus has a back biasing connection on the substrate at which a biasing voltage is applied during erasure of the flash EEPROM memory cell. The method of applying the biasing voltage to the back biasing connection during erasure of the flash EEPROM memory cell reduces band-to-band current between the source region and the substrate during erasure of the flash memory cell. This reduction provides for gate size reduction in flash memory cells without inducing detrimental short channel effects.
    Type: Grant
    Filed: December 15, 1999
    Date of Patent: May 22, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Daniel Sobek, Timothy James Thurgate, Scott D. Luning, Vei-Han Chan, Sameer S. Haddad
  • Patent number: 6005808
    Abstract: A method and apparatus for reducing band-to-band currents during the erasure of a flash EEPROM memory cell is provided. The apparatus has a back biasing connection on the substrate at which a biasing voltage is applied during erasure of the flash EEPROM memory cell. The method of applying the biasing voltage to the back biasing connection during erasure of the flash EEPROM memory cell reduces band-to-band current between the source region and the substrate during erasure of the flash memory cell. This reduction provides for gate size reduction in flash memory cells without inducing detrimental short channel effects.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: December 21, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Daniel Sobek, Timothy James Thurgate, Scott D. Luning, Vei-Han Chan, Sameer S. Haddad