Abstract: A semiconductor wafer manufacturing process is disclosed wherein a double side polished wafer having oxygen induced stacking faults to provide extrinsic gettering on the back surface of the wafer. The process includes polishing the back surface of the wafer, and depositing a thin polysilicon film on the polished back surface. The wafer is then subjected to a thermal oxidation step, wherein the polysilicon film is consumed by the thermal oxidation step. The oxide layer is then stripped from the back surface, leaving oxygen induced stacking faults on the back surface of the wafer. The front surface of the wafer is then polished, thereby producing a double side polished wafer containing extrinsic gettering sites on the polished back surface.

Abstract: A semiconductor wafer manufacturing process is disclosed wherein a double side polished wafer having oxygen induced stacking faults to provide extrinsic gettering on the back surface of the wafer. The process includes polishing the back surface of the wafer, and depositing a thin polysilicon film on the polished back surface. The wafer is then subjected to a thermal oxidation step, wherein the polysilicon film is consumed by the thermal oxidation step. The oxide layer is then stripped from the back surface, leaving oxygen induced stacking faults on the back surface of the wafer. The front surface of the wafer is then polished, thereby producing a double side polished wafer containing extrinsic gettering sites on the polished back surface.

Abstract: A semiconductor wafer manufacturing process is disclosed wherein a double side polished wafer having oxygen induced stacking faults to provide extrinsic gettering on the back surface of the wafer. The process includes polishing the back surface of the wafer, and depositing a thin polysilicon film on the polished back surface. The wafer is then subjected to a thermal oxidation step, wherein the polysilicon film is consumed by the thermal oxidation step. The oxide layer is then stripped from the back surface, leaving oxygen induced stacking faults on the back surface of the wafer. The front surface of the wafer is then polished, thereby producing a double side polished wafer containing extrinsic gettering sites on the polished back surface.

Abstract: A novel automated method for measuring oxygen stacking fault density on silicon wafers using methods for measuring surface roughness of a silicon wafer. A silicon wafer manufactured according to processes that include the novel automated method for measuring oxygen stacking fault density on silicon wafers using methods for measuring surface roughness of a silicon wafer.

Abstract: An electric starter for a kick-only motorcycle which can be mounted directly on the motorcycle and connected to the kickshaft of the motorcycle, or can be used as a stand-alone starter connected to the kicker arm, where the starter drives a pinion gear which partially rotates a kicker arc gear to crank the motor.

Abstract: An electron discharge machining (E.D.M.) tool combination is useful for removal of an installed nuclear steam generator tube plug of conductive material. A conductive wand shaft connected to an E.D.M. voltage source is movably mounted in a housing and insulated from the housing. An inlet adapter is mounted on the wand end and connected to a source of deionized and demineralized water to provide a dielectric fluid and removed material carrier. A hollow electrode is mounted on a hollow extension beyond the end of the wand and inlet adapter in fluid communication with the adapter for movement with the wand relative to the housing. A drive plate is moved by means of a ball nut along a roller ball shaft which is rotationally driven by a motor in the housing. The drive plate reciprocates the wand and electrode for E.D.M. operation. The wand position can be monitored remotely by a signal from a potentiometer with a tap movable with the wand.