Abstract: A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.

Abstract: A resistive random access memory device comprises: a bottom electrode; a bottom layer of dielectric material formed on the bottom electrode; a plurality of conductive contacts extending from the bottom electrode through the bottom layer of dielectric material; a top layer of dielectric material formed on the bottom layer of dielectric material and on the conductive contacts; a top electrode on the top layer of dielectric material; and at least one filament extending from the plurality of conductive contacts through the top layer of dielectric material to the top electrode.

Abstract: The invention is directed to a phase-change memory (PCM) device. The device includes an electrically insulating material and a PCM cell, which is embedded in the electrically insulating material. The PCM cell includes a phase-change material layer (or PCM layer, for short), e.g., a layer including a germanium-antimony-tellurium alloy. The PCM layer has a top surface, a bottom surface, and a side surface linking the top surface and the bottom surface. The PCM cell further includes an outer electrode, which contacts the side surface of the PCM layer. That is, the outer electrode laterally caps the PCM layer. The PCM cell further includes a heater extending at least partially through the PCM layer, transversely to the top surface and the bottom surface of the PCM layer, to contact the PCM layer.

Abstract: Semiconductor devices and methods for forming the semiconductor devices are described. A semiconductor device can include a first electrode, a storage node, a second electrode and a film layer. The storage node can include phase change material deposited on top of the first electrode. The film layer can be deposited on top of the storage node and connected in a closed circuit. A voltage difference among the first electrode, the second electrode and the film layer can dictate a threshold voltage that triggers a phase change of the phase change material. An amorphous volume in the storage node can be dependent on a structural arrangement of the first electrode, the second electrode and the film layer with respect to the storage node.

Abstract: A phase change memory device that includes a composite phase change material layer comprising a mixture of a dispersed phase of a projection material of a first resistivity, and a matrix of a phase-change material of a second resistivity or third resistivity dependent on phase. The first resistivity of the projection material has a resistance that is greater than the second resistance for the phase change material, and is less than the third resistance of the phase change material. The phase change memory device further includes a first electrode; and a second electrode on opposing faces of the composite phase change material layer. The projection material forms a percolated conducting path from the first electrode to the second electrode.

Abstract: An apparatus comprising a dielectric layer located between a first electrode and a second electrode and a third electrode located on the dielectric layer between the first electrode and the electrode, wherein the first electrode is separated from a first side of the third electrode by a first portion of the dielectric layer, and the second electrode is separated from a second side of the third electrode by a second portion of the dielectric layer.

Abstract: Embodiments of present invention provide a vertical magnetic tunnel junction (MTJ) structure. The structure includes an L-shaped MTJ stack including an L-shaped reference layer conformally on an L-shaped performance enhancing layer; an L-shaped tunnel barrier layer conformally on the L-shaped reference layer; and an L-shaped free layer conformally on the L-shaped tunnel barrier layer, where a vertical portion of the L-shaped MTJ stack is adjacent to a sidewall of a metal stud, the metal stud being directly on top of a metal wire in a dielectric layer. The structure further includes a first and a second electrode contacting a horizontal portion and a vertical portion of the L-shaped MTJ stack. A method of forming the same is also provided.

Abstract: An electrical device includes a first electrode in series with a second electrode. A phase change memory (PCM) is in series with the second electrode. A variable electrical element is in series with the phase change memory.

Abstract: A computer memory device includes a bottom electrode, a top electrode, and a memory component arranged between the top electrode and the bottom electrode. The memory component is made of a dielectric solid-state material and is in direct contact with the top electrode and the bottom electrode. The computer memory device further includes a proximity heater configured to increase a temperature of a portion of the memory component. The computer memory device further includes a layer of dielectric material in direct contact with the proximity heater. The layer of dielectric material is in direct contact with one of the bottom electrode and the top electrode.

Abstract: Systems, methods, and semiconductor devices for transfer learning are described. A semiconductor device can include a first non-volatile memory (NVM) and a second NVM. The first NVM can be configured to store weights of a first set of layers of a machine learning model. The weights of the first set of layers can be fixed. The second NVM can be configured to store weights of a second set of layers of the machine learning model. The weights of the second set of layers can be adjustable.

Abstract: Insulated phase change memory devices are provided that include a first electrode; a second electrode; a phase change material disposed in an electrical path between the first electrode and the second electrode; and a porous dielectric configured to concentrate heat produced by a reset current carried through the phase change material between the first electrode and the second electrode to mitigate an amount of heat that escapes from the phase change material. The porous dielectric may be an inherently porous dielectric material or a dielectric material in which porous structures are induced during fabrication. Methods of fabrication of such devices are also provided.

Abstract: Embodiments of present invention provide a magnetic tunnel junction (MTJ) structure. The MTJ structure includes a MTJ stack, the MTJ stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, wherein the free layer includes multiple sub free layers, the multiple sub free layers being multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the multiple ferromagnetic strips having respective first ends connected to a first electrode and respective second ends connected to a second electrode. A method of forming the MTJ structure is also provided.

Abstract: A structure including alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A structure including horizontally aligned alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A method including forming alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode.

Abstract: A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.

Abstract: Memory cells and methods of forming the same include forming a hole in an interlayer dielectric to expose an end of a conductive top electrode. A phase change material is conformally deposited on surfaces of the hole. A remaining portion of the hole is filled with a dielectric material after conformally depositing the phase change material.

Abstract: A structure comprising a top electrode and a bottom electrode. The structure further comprises a multilayer stack disposed between the top electrode and the bottom electrode, where the multilayer stack comprises alternating confinement layers and phase-change material layers, and where at least two of the phase-change material layers have different doping concentrations of at least one dopant.

Abstract: A phase change memory device is provided. The phase change memory device includes a phase change memory material within an electrically insulating wall, a first heater terminal in the electrically insulating wall, and two read terminals in the electrically insulating wall.

Abstract: A non-volatile memory structure may include a phase change memory comprising a phase change material. The non-volatile memory structure may include a Schottky diode in series with the phase change memory, wherein a Schottky barrier of the Schottky diode is a surface of the phase change memory. This may be accomplished through a proper selection of materials for the contact of the phase change memory. This may create an integrated diode-memory structure which may control directionality of current without a penalty on the footprint of the structure.

Abstract: A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode. A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode, where the inner electrode and the outer electrode are on the same horizontal plane. A method including forming an inner electrode and an outer electrode simultaneously on a substrate, forming a phase change material layer above both the inner electrode and the outer electrode.