Abstract: A method of forming nanosheet and nanowire transistors includes the formation of alternating epitaxial layers of silicon germanium (SiGe) and silicon (Si). The silicon germanium layers include etch-selective high-germanium content silicon germanium layers and low-germanium content silicon germanium layers. Single work function metal PFET and NFET devices can be formed on the same substrate by incorporating the low-germanium content silicon germanium layers into the channel region within p-type device regions, whereas both the high-germanium content silicon germanium layers and the low-germanium content silicon germanium layers are removed from within n-type device regions.

Abstract: An applicator for seed treatment products includes an elongated, cylindrical tube having an enlarged flange at a top end for receiving a canister of treatment products. The bottom end of the tube is inserted into a seed hopper filled with seeds, the tube penetrating beneath the surface of the seeds. A canister of treatment products is opened at one end and inserted into the flange with the open side down. The canister fits snugly in the flange so the treatment products can escape only from the bottom of the tube which is within the seed pile. The user stirs the pile with the tube to distribute the treatment products evenly throughout the pile.

Abstract: An applicator for seed treatment products includes an elongated, cylindrical tube having an enlarged flange at a top end for receiving a canister of treatment products. The bottom end of the tube is inserted into a seed hopper filled with seeds, the tube penetrating beneath the surface of the seeds. A canister of treatment products is opened at one end and inserted into the flange with the open side down. The canister fits snugly in the flange so the treatment products can escape only from the bottom of the tube which is within the seed pile. The user stirs the pile with the tube to distribute the treatment products evenly throughout the pile.