Patents by Inventor Timothy Milakovich

Timothy Milakovich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11791455
    Abstract: In an aspect, a lithium-ion battery anode composition comprises a porous composite particle comprising carbon (C) and an active material comprising silicon (Si), wherein the carbon is characterized by a domain size (r), as estimated from an atomic pair distribution function G(r) obtained from a synchrotron x-ray diffraction measurement of the porous composite particle, ranging from around 10 ? (1 nm) to around 60 ? (6 nm). In a further aspect, a carbon material for use in making an anode composition for use in a Li-ion battery is characterized by a domain size (r), as estimated from an atomic pair distribution function G(r) obtained from a synchrotron x-ray diffraction measurement of the carbon material, ranging from around 10 ? (1 nm) to around 60 ? (6 nm).
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: October 17, 2023
    Assignee: SILA NANOTECHNOLOGIES, INC.
    Inventors: Gleb Yushin, Matthew Clark, Adam Kajdos, Timothy Milakovich, Saujan Sivaram, Valentin Lulevich
  • Publication number: 20230170466
    Abstract: In an aspect, a lithium-ion battery anode composition comprises a porous composite particle comprising carbon (C) and an active material comprising silicon (Si), wherein the carbon is characterized by a domain size (r), as estimated from an atomic pair distribution function G(r) obtained from a synchrotron x-ray diffraction measurement of the porous composite particle, ranging from around 10 ? (1 nm) to around 60 ? (6 nm). In a further aspect, a carbon material for use in making an anode composition for use in a Li-ion battery is characterized by a domain size (r), as estimated from an atomic pair distribution function G(r) obtained from a synchrotron x-ray diffraction measurement of the carbon material, ranging from around 10 ? (1 nm) to around 60 ? (6 nm).
    Type: Application
    Filed: January 12, 2023
    Publication date: June 1, 2023
    Inventors: Gleb YUSHIN, Matthew CLARK, Adam KAJDOS, Timothy MILAKOVICH, Saujan SIVARAM, Valentin LULEVICH
  • Publication number: 20230079476
    Abstract: In an aspect, a lithium-ion battery anode composition comprises a porous composite particle comprising carbon (C) and an active material comprising silicon (Si), wherein the carbon is characterized by a domain size (r), as estimated from an atomic pair distribution function G(r) obtained from a synchrotron x-ray diffraction measurement of the porous composite particle, ranging from around 10 ? (1 nm) to around 60 ? (6 nm). In a further aspect, a carbon material for use in making an anode composition for use in a Li-ion battery is characterized by a domain size (r), as estimated from an atomic pair distribution function G(r) obtained from a synchrotron x-ray diffraction measurement of the carbon material, ranging from around 10 ? (1 nm) to around 60 ? (6 nm).
    Type: Application
    Filed: September 7, 2022
    Publication date: March 16, 2023
    Inventors: Gleb YUSHIN, Matthew CLARK, Adam KAJDOS, Timothy MILAKOVICH, Saujan SIVARAM, Valentin LULEVICH
  • Patent number: 9490330
    Abstract: Initiation conditions and strain techniques are described that enable forming high quality GaAsP semiconductor material on an SiGe semiconductor material with low threading defect density. Suitable initiation conditions include exposing the SiGe semiconductor material to a gas comprising arsenic. A tensilely-strained region may be formed in the semiconductor structure between regions of GaAsP semiconductor material and SiGe semiconductor material.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: November 8, 2016
    Assignee: Massachusetts Institute of Technology
    Inventors: Eugene A. Fitzgerald, Prithu Sharma, Timothy Milakovich
  • Publication number: 20150255549
    Abstract: Initiation conditions and strain techniques are described that enable forming high quality GaAsP semiconductor material on an SiGe semiconductor material with low threading defect density. Suitable initiation conditions include exposing the SiGe semiconductor material to a gas comprising arsenic. A tensilely-strained region may be formed in the semiconductor structure between regions of GaAsP semiconductor material and SiGe semiconductor material.
    Type: Application
    Filed: October 4, 2013
    Publication date: September 10, 2015
    Applicant: Massachusetts Institute of Technology
    Inventors: Eugene A. Fitzgerald, Prithu Sharma, Timothy Milakovich