Abstract: An apparatus is provided. In the apparatus, there is comprises a substrate with a first region of a first conductivity type, a second region of a second conductivity type that is substantially surrounded by the first region, and a third region of the second conductivity type that is substantially surrounded by the second region. A first dielectric layer is formed over the substrate, and a first conductive layer is formed over the first dielectric layer, which is configured to form a first electrode of a capacitor. A second dielectric layer is formed over the first conductive layer. A plate is formed over the second dielectric layer so as to form a second electrode of the capacitor. A cap is formed over the second dielectric layer, being spaced apart from the plate. A via is electrically coupled to the cap and the third region, extending through the first and second dielectric layers.

Abstract: In many applications, particularly in automotive applications, integrated circuits (IC) are designed to withstand large fly-back currents from inductive loads. As these ICs have become smaller, the switching transistors (which are coupled to the inductive loads) have remained relatively large so as to withstand the fly-back currents. The size of these switching transistors has become a limiting factor in designing compact ICs. Here, an IC is provided with an adaptive clamp that allows for a significant reduction in the area of a switching transistor for an inductive load.

Abstract: In many applications, particularly in automotive applications, integrated circuits (IC) are designed to withstand large fly-back currents from inductive loads. As these ICs have become smaller, the switching transistors (which are coupled to the inductive loads) have remained relatively large so as to withstand the fly-back currents. The size of these switching transistors has become a limiting factor in designing compact ICs. Here, an IC is provided with an adaptive clamp that allows for a significant reduction in the area of a switching transistor for an inductive load.