Abstract: The present disclosure includes apparatuses and methods for parallel writing to multiple memory device locations. An example apparatus comprises a memory device. The memory device includes an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component configured to implement logical operations. A memory controller in the memory device is configured to receive a block of resolved instructions and/or constant data from the host. The memory controller is configured to write the resolved instructions and/or constant data in parallel to a plurality of locations the memory device.

Abstract: Examples of the present disclosure provide apparatuses and methods for determining a data storage layout. An example apparatus comprising a first address space of a memory array comprising a first number of memory cells coupled to a plurality of sense lines and to a first select line. The first address space is configured to store a logical representation of a first portion of a value. The example apparatus also comprising a second address space of the memory array comprising a second number of memory cells coupled to the plurality of sense lines and to a second select line. The second address space is configured to store a logical representation of a second portion of the value. The example apparatus also comprising sensing circuitry configured to receive the first value and perform a logical operation using the value without performing a sense line address access.

Abstract: Examples of the present disclosure provide apparatuses and methods for error code calculation. The apparatus can include an array of memory cells that are coupled to sense lines. The apparatus can include a controller configured to control a sensing circuitry, that is coupled to the sense lines, to perform a number of operations without transferring data via an input/output (I/O) lines. The sensing circuitry can be controlled to calculate an error code for data stored in the array of memory cells and compare the error code with an initial error code for the data to determine whether the data has been modified.

Abstract: Examples of the present disclosure provide apparatuses and methods for multiple endianness compatibility. An example method comprises receiving a plurality of bytes and determining a particular endianness format of the plurality of bytes. The method can include, responsive to determining the particular endianness format is a first endianness format, reordering bits of each byte of the plurality of bytes on a bytewise basis, storing the reordered plurality of bytes in an array of memory cells, and adjusting a shift direction associated with performing a number of operations on the plurality of bytes stored in the array. The method can include, responsive to determining the particular endianness format is a second endianness format, storing the plurality of bytes in the array without reordering bits of the plurality of bytes.

Abstract: Examples of the present disclosure provide apparatuses and methods for multiple endianness compatibility. An example method comprises receiving a plurality of bytes in a non-bit-sequential format. The method includes reordering the bits in each byte of the plurality of bytes such that the plurality of bytes are arranged in a bit-sequential format.

Abstract: The present disclosure includes apparatuses and methods related to determining population count. An example apparatus comprises an array of memory cells coupled to sensing circuitry. The apparatus can include a controller configured to cause: summing, in parallel, of data values corresponding to respective ones of a plurality of first vectors stored in memory cells of the array as a data value sum representing a population count thereof, wherein a second vector is stored as the plurality of first vectors, and wherein each first vector of the plurality of first vectors is stored in respective memory cells of the array that are coupled to a respective sense line of a plurality of sense lines; and iteratively summing, in parallel, of data value sums corresponding to the plurality of first vectors to provide a single data value sum corresponding to the second vector.

Abstract: Examples of the present disclosure provide apparatuses and methods for determining a data storage layout. An example apparatus comprising a first address space of a memory array comprising a first number of memory cells coupled to a plurality of sense lines and to a first select line. The first address space is configured to store a logical representation of a first portion of a value. The example apparatus also comprising a second address space of the memory array comprising a second number of memory cells coupled to the plurality of sense lines and to a second select line. The second address space is configured to store a logical representation of a second portion of the value. The example apparatus also comprising sensing circuitry configured to receive the first value and perform a logical operation using the value without performing a sense line address access.