Abstract: A bonded diamond assembly and a method of forming the assembly. The assembly comprises a polycrystalline diamond wafer having a largest linear dimension of between 25 mm and 200 mm, a substrate and a bonding layer located between the diamond and the substrate and bonding them together. The bonding layer, when inspected using ultrasound using a resolution of 50 ?m, a focal length selected to inspect the bonding layer, and frequencies of 100 MHz and 30 MHz, comprises low numbers of voids extending either across the thickness of the bonding layer and low numbers of voids that do not extend across the thickness of the bonding layer.

Abstract: A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.

Abstract: An electrode comprising synthetic high-pressure high-temperature diamond material, the diamond material comprising a substitutional boron concentration of between 1×1020 and 5×1021 atoms/cm3 and a nitrogen concentration of no more than 1019 atoms/cm3. The electrode has a ?E3/4-1/4 as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO3 and 1 mM of Ru(NH3)63+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV, and/or a peak to peak separation ?Ep as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO3 and 1 mM of Ru(NH3)63+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV.

Abstract: An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.

Abstract: An electrochemical sensor comprising: a boron doped diamond electrode formed of boron doped diamond material; an array of non-diamond carbon sites disposed on a sensing surface of the boron doped diamond electrode; electrochemically active surface groups bonded to the non-diamond carbon sites for generating a redox peak associated with a target species which reacts with the electrochemically active surface groups bonded to the non-diamond carbon sites when a solution containing the target species is disposed in contact with the sensing surface in use; an electrical controller configured to scan the boron doped diamond electrode over a potential range to generate said redox peak; and a processor configured to give an electrochemical reading based on one or both of a position and an intensity of said redox peak.

Abstract: An earth-boring drilling tool comprises a cutting element. The cutting element comprises a substrate, a diamond table, and at least one sensing element formed from a doped diamond material disposed at least partially within the diamond table. A method for determining an at-bit measurement for an earth-boring drill bit comprises receiving an electrical signal generated within a doped diamond material disposed within a diamond table of a cutting element of the earth-boring drill bit, and correlating the electrical signal with at least one parameter during a drilling operation.

Abstract: A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.

Abstract: A method of forming an instrumented cutting element comprises forming a free-standing sintered diamond table having at least one chamber in the free-standing sintered diamond table, providing a doped diamond material within the at least one chamber, and attaching a substrate to the free-standing sintered diamond table to form an instrumented cutting element. The instrumented cutting element includes the doped diamond material disposed within the sintered diamond table on the substrate. A method of forming an earth-boring tool comprises attaching at least one instrumented cutting element to a body of an earth-boring tool. The at least one instrumented cutting element has a diamond table bonded to a substrate. The diamond table has at least one sensing element disposed at least partially within the diamond table. The at least one sensing element comprises a doped diamond material.

Abstract: A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 ?m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.

Abstract: A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionized water and 0.1M KNO3 as a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm?2; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.

Abstract: An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.

Abstract: An earth-boring drilling tool comprises a cutting element. The cutting element comprises a substrate, a diamond table, and at least one sensing element formed from a doped diamond material disposed at least partially within the diamond table. A method for determining an at-bit measurement for an earth-boring drill bit comprises receiving an electrical signal generated within a doped diamond material disposed within a diamond table of a cutting element of the earth-boring drill bit, and correlating the electrical signal with at least one parameter during a drilling operation.

Abstract: An earth-boring drilling tool comprises a cutting element. The cutting element comprises a substrate, a diamond table, and at least one sensing element formed from a doped diamond material disposed at least partially within the diamond table. A method for determining an at-bit measurement for an earth-boring drill bit comprises receiving an electrical signal generated within a doped diamond material disposed within a diamond table of a cutting element of the earth-boring drill bit, and correlating the electrical signal with at least one parameter during a drilling operation.

Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 ?m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.

Abstract: A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 ?m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.

Abstract: An electrochemical sensor comprising: a boron doped diamond electrode formed of boron doped diamond material; an array of non-diamond carbon sites disposed on a sensing surface of the boron doped diamond electrode; electrochemically active surface groups bonded to the non-diamond carbon sites for generating a redox peak associated with a target species which reacts with the electrochemically active surface groups bonded to the non-diamond carbon sites when a solution containing the target species is disposed in contact with the sensing surface in use; an electrical controller configured to scan the boron doped diamond electrode over a potential range to generate said redox peak; and a processor configured to give an electrochemical reading based on one or both of a position and an intensity of said redox peak.

Abstract: The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Abstract: A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.

Abstract: A method of forming an instrumented cutting element comprises forming a free-standing sintered diamond table having at least one chamber in the free-standing sintered diamond table, providing a doped diamond material within the at least one chamber, and attaching a substrate to the free-standing sintered diamond table to form an instrumented cutting element. The instrumented cutting element includes the doped diamond material disposed within the sintered diamond table on the substrate. A method of forming an earth-boring tool comprises attaching at least one instrumented cutting element to a body of an earth-boring tool. The at least one instrumented cutting element has a diamond table bonded to a substrate. The diamond table has at least one sensing element disposed at least partially within the diamond table. The at least one sensing element comprises a doped diamond material.

Abstract: An earth-boring drilling tool comprises a cutting element. The cutting element comprises a substrate, a diamond table, and at least one sensing element formed from a doped diamond material disposed at least partially within the diamond table. A method for determining an at-bit measurement for an earth-boring drill bit comprises receiving an electrical signal generated within a doped diamond material disposed within a diamond table of a cutting element of the earth-boring drill bit, and correlating the electrical signal with at least one parameter during a drilling operation.