Abstract: A method of forming a semiconductor device is presented. A substrate prepared with a second gate is provided. The second gate is processed to form a second gate with a rounded corner and a first gate is formed on the substrate. The first gate is adjacent to and overlaps a portion of the second gate and the rounded corner.

Abstract: A method of forming a semiconductor device is presented. A substrate prepared with a second gate is provided. The second gate is processed to form a second gate with a rounded corner and a first gate is formed on the substrate. The first gate is adjacent to and overlaps a portion of the second gate and the rounded corner.

Abstract: A system is provided for forming a semiconductor device. Layers of gate dielectric material, gate material, and cap material are formed on a semiconductor substrate. The cap material and a portion of the gate material are processed to form a cap and a gate body portion. A wing on the gate body portion is formed from a remaining portion of the gate material. The gate dielectric material under a portion of the wing on the gate body portion is removed to form a gate dielectric. A lightly-doped source/drain region is formed in the semiconductor substrate using the gate body portion and the wing.

Abstract: A system is provided for forming a semiconductor device. Layers of gate dielectric material, gate material, and cap material are formed on a semiconductor substrate. The cap material and a portion of the gate material are processed to form a cap and a gate body portion. A wing on the gate body portion is formed from a remaining portion of the gate material. The gate dielectric material under a portion of the wing on the gate body portion is removed to form a gate dielectric. A lightly-doped source/drain region is formed in the semiconductor substrate using the gate body portion and the wing.

Abstract: A system is provided for forming a semiconductor device. Layers of gate dielectric material, gate material, and cap material are formed on a semiconductor substrate. The cap material and a portion of the gate material are processed to form a cap and a gate body portion. A wing on the gate body portion is formed from a remaining portion of the gate material. The gate dielectric material under a portion of the wing on the gate body portion is removed to form a gate dielectric. A lightly-doped source/drain region is formed in the semiconductor substrate using the gate body portion and the wing.

Abstract: A process to form a FET using a replacement gate. An example feature is that the PMOS sacrificial gate is made narrower than the NMOS sacrificial gate. The PMOS gate is implanted preferably with Ge to increase the amount of poly sacrificial gate that is oxidized to form PMOS spacers. The spacers are used as masks for the LDD Implant. The space between the PLLD regions is preferably larger that the space between the NLDD regions because of the wider PMOS spacers. The PLDD tends to diffuse readily more than NLDD due to the dopant being small and light (i.e. Boron). The wider spacer between the PMOS regions improves device performance by improving the short channel effects for PMOS. In addition, the oxidization of the sacrificial gates allows trimming of sacrificial gates thus extending the limitation of lithography. Another feature of an embodiment is that a portion of the initial pad oxide is removed, thus reducing the amount of undercut created during the channel oxide strip for the dummy gate process.

Abstract: A system is provided for forming a semiconductor device. Layers of gate dielectric material, gate material, and cap material are formed on a semiconductor substrate. The cap material and a portion of the gate material are processed to form a cap and a gate body portion. A wing on the gate body portion is formed from a remaining portion of the gate material. The gate dielectric material under a portion of the wing on the gate body portion is removed to form a gate dielectric. A lightly-doped source/drain region is formed in the semiconductor substrate using the gate body portion and the wing.