Patents by Inventor Timothy Quick

Timothy Quick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8633112
    Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: January 21, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Dan B. Millward, Timothy Quick
  • Patent number: 8426313
    Abstract: Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: April 23, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Dan B. Millward, Timothy Quick
  • Publication number: 20120223053
    Abstract: Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
    Type: Application
    Filed: May 11, 2012
    Publication date: September 6, 2012
    Inventors: Dan B. Millward, Timothy Quick
  • Publication number: 20090236309
    Abstract: Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.
    Type: Application
    Filed: March 21, 2008
    Publication date: September 24, 2009
    Inventors: Dan B. Millward, Timothy Quick
  • Publication number: 20080214001
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Application
    Filed: June 28, 2005
    Publication date: September 4, 2008
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy Quick
  • Publication number: 20070155190
    Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
    Type: Application
    Filed: February 28, 2007
    Publication date: July 5, 2007
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Brian Vaartstra, Timothy Quick
  • Publication number: 20060292873
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Application
    Filed: June 28, 2005
    Publication date: December 28, 2006
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Dan Millward, Stefan Uhlenbrock, Timothy Quick
  • Publication number: 20060292303
    Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one ?-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one ?-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the ?-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.
    Type: Application
    Filed: June 28, 2005
    Publication date: December 28, 2006
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Dan Millward, Timothy Quick
  • Publication number: 20060292841
    Abstract: The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one ?-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.
    Type: Application
    Filed: June 28, 2005
    Publication date: December 28, 2006
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Timothy Quick
  • Publication number: 20060258175
    Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
    Type: Application
    Filed: July 17, 2006
    Publication date: November 16, 2006
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Brian Vaartstra, Timothy Quick
  • Publication number: 20060252244
    Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
    Type: Application
    Filed: July 12, 2006
    Publication date: November 9, 2006
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Brian Vaartstra, Timothy Quick
  • Publication number: 20050019978
    Abstract: A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
    Type: Application
    Filed: August 23, 2004
    Publication date: January 27, 2005
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Brian Vaartstra, Timothy Quick