Abstract: A fan assembly includes a fan housing including a shroud that at least partially defines an airflow chamber, a battery receptacle supported on the shroud, a first grille positioned adjacent a first end of the airflow chamber, a fan supported within the airflow chamber and rotatably coupled to one of the first grille or the shroud, and a motor supported on the other of the first grille or the shroud. The motor is operable to drive rotation of the fan and thereby generate airflow through the airflow chamber. The fan assembly further includes a base coupled to the fan housing. The base is operable to support the fan housing in multiple configurations to direct the airflow in multiple directions.

Abstract: A battery powered fan assembly for use with a stackable storage system includes a base defining a storage area, a fan housing that at least partially defines an airflow chamber, a plurality of fan blades positioned within the airflow chamber, a motor operable to rotate the plurality of fan blades, a battery receptacle configured to receive a removable battery pack to power the motor, a mating interface formed on at least one of the base and the fan housing, and a latch mounted to the base. The mating interface is configured to interact with a complementary mating interface formed on a stackable element of the stackable storage system, and the latch is configured to selectively inhibit relative movement between the fan assembly and the stackable element while the mating interface of the fan assembly interacts with the complementary mating interface of the stackable element.

Abstract: A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.

Abstract: A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.