Abstract: The instant disclosure provides nucleic acid amplification systems and multi-reaction analysis systems useful in the efficient processing of samples, including clinical samples. Integrated systems that include nucleic acid amplification devices functionally combined with multi-reaction analysis systems are also included. Also provided are methods for monitoring multiple concurrent nucleic acid amplification reactions that include the use of devices and systems described herein.

Abstract: A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.

Abstract: A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.

Abstract: A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.

Abstract: A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.

Abstract: A method of singulating integrated circuit chips. The method includes forming, from a bottom surface of a substrate, trenches part way through the substrate in the kerf regions surrounding integrated circuit regions previously formed in the substrate; placing a top surface of the substrate on a singulation fixture having compartments, the walls of the compartments fitting into the trenches in the substrate; and thinning the bottom surface of the substrate until the individual integrated circuit regions are singulated into individual integrated circuit chips.

Abstract: A method and system for quantifying profile characteristics of semiconductor devices, including receiving profile data for a device under evaluation and isolating from the profile data a region indicating a profile edge. The profile edge data is rotated by ninety degrees to become rotated profile edge data. The non-rotated profile edge data or rotated profile edge data is then used to calculate at least one geometric parameter describing the profile edge.

Abstract: A method evaluating an integrated circuit manufacturing process first establishes a “desired” profile of a given film in a prescribed manufacturing process by first recording multiple thickness measures taken at regular intervals along a number of lines crossing a plurality of different sample production runs of the same film formed in the integrated circuit manufacturing process. Next, the invention plots the thickness measures to produce sample film profiles of the film. These sample film profiles are averaged in a statistical process to produce the desired film profile. The desired film profile is compared to an actual production run. If the actual film profile does not match the desired film profile, the integrated circuit manufacturing process used to make the actual film profile can then be adjusted to make the actual film profile match the desired film profile more closely.

Abstract: A method of evaluating an integrated circuit manufacturing process first establishes a “desired” profile of a given film in a prescribed manufacturing process by first recording multiple thickness measures taken at regular intervals along a number of lines crossing a plurality of different sample production runs of the same film formed in the integrated circuit manufacturing process. Next, the invention plots the thickness measures to produce sample film profiles of the film. These sample film profiles are averaged in a statistical process to produce the desired film profile. The desired film profile is compared to an actual production run. If the actual film profile does not match the desired film profile, the integrated circuit manufacturing process used to make the actual film profile can then be adjusted to make the actual film profile match the desired film profile more closely.

Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

Abstract: An exemplary embodiment of the invention is a method and system for determining a radius of curvature of a two-dimensional curved feature. The system includes an image acquisition device for obtaining images of said curved feature. A processor is coupled to the image acquisition device for receiving the images and converting the images to n sets of coordinates corresponding to points on the perimeter of the curved feature. The processor chooses at least three sets of said coordinates to define at least one group and fits each set of said coordinates from each group to an equation for a circle and determines a radius of curvature by solving each equation simultaneously. A storage device is coupled to the processor for storing processor data. An output device is coupled to the processor for outputting processor data.

Abstract: The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

Abstract: A method and system for quantifying profile characteristics of semiconductor devices, including receiving profile data for a device under evaluation and isolating from the profile data a region indicating a profile edge. The profile edge data is rotated by ninety degrees to become rotated profile edge data. The non-rotated profile edge data or rotated profile edge data is then used to calculate at least one geometric parameter describing the profile edge.