Abstract: First information identifying a first one of a target circuit or a radio frequency (RF) tag is conveyed to a second one of the target circuit or the RF tag. Second information identifying the second one of the target circuit and the RF tag is then derived from the conveyed first information. The second information is then stored. In some cases, the first information is conveyed over a wired interface or a wireless interface between the target circuit and the RF tag. The first information identifying the RF tag can be conveyed to the target circuit, and second information identifying the target circuit can be derived based on the first information identifying the RF tag by equating the second information to the first information or applying a predetermined algorithm to the first information to generate the second information.

Abstract: A non-volatile memory (NVM) controller is configured to control reads from and writes to an NVM array, and includes a write buffer and a buffer control circuit. The write buffer includes a plurality of entries, each configured to store a write access having a corresponding page address of the NVM array and corresponding write data. The buffer control circuit is configured to store a write access having a corresponding page address of the NVM array and corresponding write data, and generate burst writes from the write buffer to the NVM array. The buffer control circuit generates a burst write by sequentially selecting write accesses from the write buffer which have consecutive page addresses, in which the length of the burst write is undefined when the burst write to the NVM array is initiated.

Abstract: A non-volatile memory (NVM) controller is configured to control reads from and writes to an NVM array, and includes a write buffer and a buffer control circuit. The write buffer includes a plurality of entries, each configured to store a write access having a corresponding page address of the NVM array and corresponding write data. The buffer control circuit is configured to store a write access having a corresponding page address of the NVM array and corresponding write data, and generate burst writes from the write buffer to the NVM array. The buffer control circuit generates a burst write by sequentially selecting write accesses from the write buffer which have consecutive page addresses, in which the length of the burst write is undefined when the burst write to the NVM array is initiated.

Abstract: First information identifying a first one of a target circuit or a radio frequency (RF) tag is conveyed to a second one of the target circuit or the RF tag. Second information identifying the second one of the target circuit and the RF tag is then derived from the conveyed first information. The second information is then stored. In some cases, the first information is conveyed over a wired interface or a wireless interface between the target circuit and the RF tag. The first information identifying the RF tag can be conveyed to the target circuit, and second information identifying the target circuit can be derived based on the first information identifying the RF tag by equating the second information to the first information or applying a predetermined algorithm to the first information to generate the second information.

Abstract: A non-volatile memory (NVM) includes a daisy chained normal read bus, a daisy chained verify read bus, and a plurality of partitions. Each partition includes a portion of the daisy chained normal read bus and a portion of the daisy chained verify read bus. A memory controller receives read data in response to normal read access requests to the NVM via the daisy chained normal read bus and, in response to write access requests to the NVM, receives verify read data via the daisy chained verify read bus. A bus sharing circuit is coupled between a first partition and a second partition. The bus sharing circuit, in response to a sharing control signal, selectively repurposes portions of the daisy chained verify read bus in at least one of the partitions to communicate read data to the memory controller in response to a normal read access request to the NVM.

Abstract: A non-volatile memory (NVM) includes a daisy chained normal read bus, a daisy chained verify read bus, and a plurality of partitions. Each partition includes a portion of the daisy chained normal read bus and a portion of the daisy chained verify read bus. A memory controller receives read data in response to normal read access requests to the NVM via the daisy chained normal read bus and, in response to write access requests to the NVM, receives verify read data via the daisy chained verify read bus. A bus sharing circuit is coupled between a first partition and a second partition. The bus sharing circuit, in response to a sharing control signal, selectively repurposes portions of the daisy chained verify read bus in at least one of the partitions to communicate read data to the memory controller in response to a normal read access request to the NVM.

Abstract: Memory built-in self-test (MBIST) circuitry for a disruptive memory includes an address sequencer configured to select an address with the disruptive memory as a test location, and control circuitry configured to direct a test sequence including a plurality of test operations on the test location. The control circuitry includes a first fault counter and a second fault counter, in which the control circuitry is configured to, after each test operation of the test sequence, determine whether to selectively update a first fault counter and whether to selectively update a second fault counter. The address sequencer, after completion of the test sequence, selects a next address within the disruptive memory as a next test location.

Abstract: A main memory includes a first plurality of input/outputs (I/Os) configured to output data stored in the main memory in response to a read access request. A first portion of the first plurality of IOs provides user read data in response to the read access request and a second portion of the first plurality of IOs provides candidate replacement IOs. Repair circuitry is configured to selectively replace one or more IOs of the first portion of IOs using one or more of the candidate replacement IOs of the second portion of IOs to provide repaired read data in response to the read access request in accordance with repair mapping information corresponding to an access address of the read access request. A static random access memory (SRAM) stores repair mapping information, and a repair cache stores cached repair mapping information from the SRAM for address locations of the main memory.

Abstract: A main memory includes a first plurality of input/outputs (I/Os) configured to output data stored in the main memory in response to a read access request. A first portion of the first plurality of IOs provides user read data in response to the read access request and a second portion of the first plurality of IOs provides candidate replacement IOs. Repair circuitry is configured to selectively replace one or more IOs of the first portion of IOs using one or more of the candidate replacement IOs of the second portion of IOs to provide repaired read data in response to the read access request in accordance with repair mapping information corresponding to an access address of the read access request. A static random access memory (SRAM) stores repair mapping information, and a repair cache stores cached repair mapping information from the SRAM for address locations of the main memory.

Abstract: Memory built-in self-test (MBIST) circuitry for a disruptive memory includes an address sequencer configured to select an address with the disruptive memory as a test location, and control circuitry configured to direct a test sequence including a plurality of test operations on the test location. The control circuitry includes a first fault counter and a second fault counter, in which the control circuitry is configured to, after each test operation of the test sequence, determine whether to selectively update a first fault counter and whether to selectively update a second fault counter. The address sequencer, after completion of the test sequence, selects a next address within the disruptive memory as a next test location.