Patents by Inventor Timothy Strobel

Timothy Strobel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BULK CRYSTALLINE 4H-SILICON THROUGH A METASTABLE ALLOTROPIC TRANSITION
    Publication number: 20230373794
    Abstract: A novel bulk form of 4H-Si, a crystalline allotrope of silicon and a novel method of manufacture. The novel material consists of highly oriented microcrystals of silicon in the 4H structure with no disordered material. The 4H-Si is derived from heating a second novel material Si24 under proper conditions. The allotrope of silicon is produced as bulk, microcrystalline agglomerates.
    Type: Application
    Filed: May 23, 2023
    Publication date: November 23, 2023
    Applicant: Carnegie Institution of Washington
    Inventors: Timothy STROBEL, Thomas SHIELL
  • Carbon-based clathrate compounds
    Patent number: 11691890
    Abstract: The present invention provides carbon-based clathrate compounds, including a carbon-based clathrate compound that includes a clathrate lattice with atoms of at least one element selected from the group consisting of carbon and boron as a host cage structure; guest atoms encapsulated within the clathrate lattice; and, substitution atoms that may be substituted for at least one portion of the carbon and boron atoms that constitute the clathrate lattice. In one embodiment, the invention provides a carbon-based clathrate compound of the formula LaB3C3.
    Type: Grant
    Filed: March 5, 2020
    Date of Patent: July 4, 2023
    Assignee: Carnegie Institution of Washington
    Inventors: Timothy Strobel, Li Zhu
  • CARBON-BASED CLATHRATE COMPOUNDS
    Publication number: 20230147042
    Abstract: The present invention provides carbon-based clathrate compounds, including a carbon-based clathrate compound that includes a clathrate lattice with atoms of at least one element selected from the group consisting of carbon and boron as a host cage structure; guest atoms encapsulated within the clathrate lattice; and, substitution atoms that may be substituted for at least one portion of the carbon and boron atoms that constitute the clathrate lattice. In one embodiment, the invention provides a carbon-based clathrate compound of the formula LaB3C3.
    Type: Application
    Filed: September 23, 2022
    Publication date: May 11, 2023
    Applicant: Carnegie Institution of Washington
    Inventors: Timothy STROBEL, Li ZHU
  • CARBON-BASED CLATHRATE COMPOUNDS
    Publication number: 20200354226
    Abstract: The present invention provides carbon-based clathrate compounds, including a carbon-based clathrate compound that includes a clathrate lattice with atoms of at least one element selected from the group consisting of carbon and boron as a host cage structure; guest atoms encapsulated within the clathrate lattice; and, substitution atoms that may be substituted for at least one portion of the carbon and boron atoms that constitute the clathrate lattice. In one embodiment, the invention provides a carbon-based clathrate compound of the formula LaB3C3.
    Type: Application
    Filed: March 5, 2020
    Publication date: November 12, 2020
    Applicant: Carnegie Institution of Washington
    Inventors: Timothy STROBEL, Li ZHU
  • Form of silicon and method of making the same
    Patent number: 10179740
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: January 15, 2019
    Assignee: CARNEGIE INSTITUTION OF WASHINGTON
    Inventors: Timothy A. Strobel, Duck Young Kim, Oleksandr O. Kurakevych
  • FORM OF SILICON AND METHOD OF MAKING THE SAME
    Publication number: 20170355605
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Application
    Filed: June 30, 2017
    Publication date: December 14, 2017
    Applicant: CARNEGIE INSTITUTION OF WASHINGTON
    Inventors: Timothy A. STROBEL, Duck Young KIM, Oleksandr O. KURAKEVYCH
  • Form of silicon and method of making the same
    Patent number: 9695051
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: July 4, 2017
    Assignee: CARNEGIE INSTITUTION OF WASHINGTON
    Inventors: Timothy A. Strobel, Duck Young Kim, Oleksandr O. Kurakevych
  • Preparation of graphitic C3N3P material
    Patent number: 9409936
    Abstract: A new graphitic material has the empirical formula C3N3P and comprises triazine rings bound together by phosphorus atoms, and/or other 5- or 6-membered rings with various carbon, nitrogen, and phosphorous connectivity. The material is made by polymerizing P(CN)3, for example by using a temperature of at least 220° C. and an elevated pressure, optionally as high as 1500° C. and 12 GPa.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: August 9, 2016
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Albert Epshteyn, Brendan Yonke, Timothy Strobel, Huiyang Gou
  • FORM OF SILICON AND METHOD OF MAKING THE SAME
    Publication number: 20160176716
    Abstract: The invention relates to a new phase of silicon, Si24, and a method of making the same. Si24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na4Si24 and a method of making the same. Na4Si24 may be used as a precursor to make Si24.
    Type: Application
    Filed: July 8, 2014
    Publication date: June 23, 2016
    Inventors: Timothy A. STROBEL, Duck Yooung KIM, Oleksander O. KURAKEVYCH
  • Preparation of Graphitic C3N3P Material
    Publication number: 20160176904
    Abstract: A new graphitic material has the empirical formula C3N3P and comprises triazine rings bound together by phosphorus atoms, and/or other 5- or 6-membered rings with various carbon, nitrogen, and phosphorous connectivity. The material is made by polymerizing P(CN)3, for example by using a temperature of at least 220° C. and an elevated pressure, optionally as high as 1500° C. and 12 GPa.
    Type: Application
    Filed: August 6, 2015
    Publication date: June 23, 2016
    Applicant: The Government of the US, as represented by the Secretary of the Navy
    Inventors: Albert Epshteyn, Brendan Yonke, Timothy Strobel, Huiyang Gou