Abstract: A method of detecting threats. A threat detection system is provided that includes a controller, a millimeter wave radar with transceiver, a signature database, and a camera. The signature database or machine learning includes time and frequency domain characteristic data for a threat. A signal is emitted by the millimeter wave radar. A return signal is received when the signal bounces off an object. Time and frequency domain characteristic data of the return signal is compared to the signature database, or the machine learned characteristics to determine the threat, anomaly, foreign object, material characteristics, and threat speech recognition.

Abstract: A method of detecting threats. A threat detection system is provided that includes a controller, a millimeter wave radar, a signature database and a camera. The signature database or machine learning includes time and frequency domain characteristic data for a threat. A signal is emitted by the millimeter wave radar. A return signal is received when the signal bounces off an object. Time and frequency domain characteristic data of the return signal is compared to the signature database or the machine learned characteristics to determine the threat, anomaly, foreign object and material characteristics.

Abstract: A method of detecting threats. A threat detection system is provided that includes a controller, a millimeter wave radar, a signature database and a camera. The signature database or machine learning includes time and frequency domain characteristic data for a threat. A signal is emitted by the millimeter wave radar. A return signal is received when the signal bounces off an object. Time and frequency domain characteristic data of the return signal is compared to the signature database or the machine learned characteristics to determine the threat, anomaly, foreign object and material characteristics.

Abstract: A variable operational mode transceiver device formed with an integrated circuit having a semiconductor material substrate supporting a feedback oscillator having a signal power divider electrically coupled to said feedback oscillator output, and a signal frequency multiplier electrically coupled to said signal power divider. A signal mixer has a pair of inputs of which one is electrically coupled to that remaining one of said pair of outputs of said signal power divider.

Abstract: A variable operational mode transceiver device formed with an integrated circuit having a semiconductor material substrate supporting a feedback oscillator having a signal power divider electrically coupled to said feedback oscillator output, and a signal frequency multiplier electrically coupled to said signal power divider. A signal mixer has a pair of inputs of which one is electrically coupled to that remaining one of said pair of outputs of said signal power divider.

Abstract: A feedback oscillator device formed with an integrated circuit having a semiconductor material substrate on a ground plane. The circuit has an amplifier having an input and an output is provided at least in part on said semiconductor material substrate. A directional coupler is used to couple the amplifier output signal to the amplifier input through a parallel separated transmission lines transfer system and a capacitor such as a varactor. The substrate can be of gallium arsenide.

Abstract: A feedback oscillator device formed with an integrated circuit having a semiconductor material substrate on a ground plane. The circuit has an amplifier having an input and an output is provided at least in part on said semiconductor material substrate. A directional coupler is used to couple the amplifier output signal to the amplifier input through a parallel separated transmission lines transfer system and a capacitor such as a varactor. The substrate can be of gallium arsenide.

Abstract: A Germanium junction field effect transistor (Ge-JFET) is fabricated in a manner to produce low noise and which is particularly suitable for a cryogenic detector. The Ge-JFET in accordance with the present invention comprises a germanium base material on which a phosphorous implanted channel region is implanted thereon. A boron cap layer overlies the channel region. On the cap layer are separately spaced drain and source ohmic contact regions, and a gate ohmic contact region therebetween. The drain and source ohmic contact regions are separately spaced arsenic implant regions and a phosphorous implant region. The gate ohmic contact region is a BF.sub.2 implanted region.

Abstract: Heterostructure metal insulator semiconductor integrated circuit technology resulting in, for instance, GaAs field-effect-transistors having much less gate current leakage and greater voltage range than like technology of the related art.