Patents by Inventor Timothy Vogt

Timothy Vogt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flexible and scalable architecture for transport processing
    Patent number: 7334132
    Abstract: A transport processor that can be used in a digital audio-video receiver system comprises a front end and a memory interface. The front end receives concurrently a plurality of transport streams, where two or more of the plurality of transport streams can have different formats, and each transport stream includes a plurality of packets. The front end includes a packet processor to create an aggregate transport stream in a single format from the plurality of transport streams. The memory interface is an interface through which the transport processor can store the aggregate transport stream in a memory for use by subsequent decode and display operations.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: February 19, 2008
    Assignee: Zoran Corporation
    Inventors: Nishit Kumar, Timothy Vogt
  • MODIFIED PSEUDO-SPIN VALVE (PSV) FOR MEMORY APPLICATIONS
    Publication number: 20070279971
    Abstract: A pseudo-spin valve for memory applications, such as magnetoresistive random access memory (MRAM), and methods for fabricating the same, are disclosed. Advantageously, memory devices with the advantageous pseudo-spin valve configuration can be fabricated without cobalt-iron and without anti-ferromagnetic layers, thereby promoting switching repeatability.
    Type: Application
    Filed: September 27, 2006
    Publication date: December 6, 2007
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Timothy Vogt, Romney Katti, Dan Schipper, Theodore Zhu, Anthony Arrott, Joel Drewes, Harry Liu, William Larson
  • Antiferromagnetically stabilized pseudo spin valve for memory applications
    Publication number: 20060018150
    Abstract: The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.
    Type: Application
    Filed: June 7, 2005
    Publication date: January 26, 2006
    Applicant: Micron Technology, Inc.
    Inventors: Romney Katti, Joel Drewes, Timothy Vogt
  • Antiferromagnetically stabilized pseudo spin valve for memory applications
    Publication number: 20050237790
    Abstract: The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.
    Type: Application
    Filed: April 11, 2005
    Publication date: October 27, 2005
    Inventors: Romney Katti, Joel Drewes, Timothy Vogt