Abstract: A product package embodying the principles of the present invention includes an integrated circuit device which is configured for radio frequency interfacing with associated equipment. The package is configured such that the integrated circuit device is disposed within the package, thus assuring that the device remains associated with the package's contents. Notably, this arrangement facilitates use of the device for applications apart from product tracking and inventory control, including product promotions, storage, and dissemination of product information, and quality assurance including tamper-indication. A packaging machine for writing information on, and or reading information from, the integrated circuit device is also disclosed.

Abstract: A product package embodying the principles of the present invention includes an integrated circuit device which is configured for radio frequency interfacing with associated equipment. The package is configured such that the integrated circuit device is disposed within the package, thus assuring that the device remains associated with the package's contents. Notably, this arrangement facilitates use of the device for applications apart from product tracking and inventory control, including product promotions, storage, and dissemination of product information, and quality assurance including tamper-indication. A packaging machine for writing information on, and or reading information from, the integrated circuit device is also disclosed.

Abstract: Sealing and stress relief are provided to a low-fracture strength glass-ceramic substrate. Hermeticity is addressed through the use of capture pads in alignment with vias and through polymer overlays with interconnection between the underlying via or pad metallurgy and the device, chip, wire or pin bonded to the surface of the layer. Multilevel structures are taught along with a self-aligned sealing and wiring process.

Abstract: Apparatus and a method for measuring trace amounts of oxygen in an atmosphere is described. An oxygen free nitrogen gas is used as the carrier gas and nitrogen, ultra high purity, with approximately 10 ppm (parts per million) water is used as the reagent gas of an ionization source is operated at atmospheric pressure. A small electric field of approximately 200 volts per centimeter is applied across the length of the ionization chamber up to a pinhole entrance to a quadrupole mass spectrometer. The voltage is biased to repel negative ions towards the quadrupole mass spectrometer. Measurement of the peak height of the m/e value of 52 in the mass spectrum are integrated over a period of time. The results of the integration are then compared to a calibration chart which indicates the amount of oxygen that is present in the atmosphere being measured.

Abstract: A system for detecting and identifying the composition of a material, such as semiconductor wafers and chips, subject to one or more stages of processing. The material is laser irradiated to induce molecular fluorescence with means to detect the decay rate of the fluorescence. The decay rate is then compared with a decay record of fluorescence of acceptable modifications of the material, inclusive of amalgamated contaminants or impurities (e.g. doped regions) to determine the state of the modification of the material.

Abstract: A method for measuring trace amounts of water in an atmosphere. A dry inert gas is used as the carrier gas and a dry gas comprising about 20 percent oxygen and about 80 percent inert gas is used as the reagent gas. The ionization source is operated at atmospheric pressure. A small electric field of about 200 volts per centimeter is applied across the ion drift chamber and it is biased to repel negative ions to a quadrupole mass filter. Measurements at an m/e value of 52 are integrated over a period of time. The results of the integration, when compared to a calibration chart, indicate the amount of water that had been present in the atmosphere being measured.

Abstract: A method of preventing out-gassing from lift-off structures formed of positive resists (as for example, o-quinone diazide/phenol formaldehyde novolak resins) during vacuum evaporation of metals in the fabrication of semiconductor devices. Such outgassing is avoided by compositional control of the photosensitive resist lift-off layer and by providing an additional baking step after the lift-off mask has been formed. Both conditions are required and critical to avoid the volatile resin decomposition products which not only tend to contaminate the device substrate surface, but also the deposited metal film. The method employs a photosensitive polymer which contains about 10 to 20 wt. % of the sensitizer (e.g. o-quinone diazide) in conjunction with a secondary baking step at about 160.degree. to about 200.degree. C. after the lift-off mask has been formed and prior to metal film deposition.