Patents by Inventor Timothy W. Kemerer
Timothy W. Kemerer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8741729Abstract: A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.Type: GrantFiled: July 11, 2013Date of Patent: June 3, 2014Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, James S. Nakos, Steven M. Shank
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Patent number: 8614137Abstract: The invention relates to a semiconductor structures and methods of manufacture and, more particularly, to a dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture. In a first aspect of the invention, a method comprises forming a trench in a substrate; forming a first insulator layer within the trench; forming a first electrode within the trench, on the first insulator layer, and isolated from the substrate by the first insulator layer; forming a second insulator layer within the trench and on the first electrode; and forming a second electrode within the trench, on the second insulator layer, and isolated from the substrate by the first insulator layer and the second insulator layer.Type: GrantFiled: February 11, 2011Date of Patent: December 24, 2013Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, James S. Nakos, Steven M. Shank
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Publication number: 20130292798Abstract: A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.Type: ApplicationFiled: July 11, 2013Publication date: November 7, 2013Inventors: Timothy W. KEMERER, James S. NAKOS, Steven M. SHANK
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Patent number: 8546243Abstract: A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.Type: GrantFiled: May 24, 2011Date of Patent: October 1, 2013Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, James S. Nakos, Steven M. Shank
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Patent number: 8441103Abstract: Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.Type: GrantFiled: January 12, 2012Date of Patent: May 14, 2013Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, James S. Nakos, Steven M. Shank
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Patent number: 8384140Abstract: A dual contact trench capacitor and design structure for a dual contact trench capacitor is provided. The structure includes a first plate extending from a trench and isolated from a wafer body, and a second plate extending from the trench and isolated from the wafer body and the first plate.Type: GrantFiled: July 29, 2008Date of Patent: February 26, 2013Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank
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Publication number: 20120299152Abstract: A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.Type: ApplicationFiled: May 24, 2011Publication date: November 29, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Timothy W. KEMERER, James S. NAKOS, Steven M. SHANK
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Publication number: 20120205776Abstract: The invention relates to a semiconductor structures and methods of manufacture and, more particularly, to a dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture. In a first aspect of the invention, a method comprises forming a trench in a substrate; forming a first insulator layer within the trench; forming a first electrode within the trench, on the first insulator layer, and isolated from the substrate by the first insulator layer; forming a second insulator layer within the trench and on the first electrode; and forming a second electrode within the trench, on the second insulator layer, and isolated from the substrate by the first insulator layer and the second insulator layer.Type: ApplicationFiled: February 11, 2011Publication date: August 16, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Timothy W. KEMERER, James S. NAKOS, Steven M. SHANK
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Patent number: 8198663Abstract: A dual contact trench capacitor and design structure for a dual contact trench capacitor is provided. The structure includes a first plate extending from a trench and isolated from a wafer body, and a second plate extending from the trench and isolated from the wafer body and the first plate.Type: GrantFiled: July 29, 2008Date of Patent: June 12, 2012Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank
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Publication number: 20120104551Abstract: Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.Type: ApplicationFiled: January 12, 2012Publication date: May 3, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Timothy W. KEMERER, James S. NAKOS, Steven M. SHANK
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Patent number: 8143135Abstract: Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.Type: GrantFiled: October 8, 2009Date of Patent: March 27, 2012Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, James S. Nakos, Steven M. Shank
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Publication number: 20110084360Abstract: Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where each electrode is formed in an alternating manner with each insulator layer. The method further includes planarizing the electrodes to form contact regions for a plurality of capacitors.Type: ApplicationFiled: October 8, 2009Publication date: April 14, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Timothy W. KEMERER, James S. NAKOS, Steven M. SHANK
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Patent number: 7897473Abstract: A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.Type: GrantFiled: July 29, 2008Date of Patent: March 1, 2011Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank
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Patent number: 7759189Abstract: A method of manufacturing a dual contact trench capacitor is provided. The method includes a first plate extending from a trench and isolated from a wafer body, and forming a second plate extending from the trench and isolated from the wafer body and the first plate.Type: GrantFiled: July 29, 2008Date of Patent: July 20, 2010Assignee: International Business Machines CorporationInventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank
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Publication number: 20100025814Abstract: A dual contact trench capacitor and design structure for a dual contact trench capacitor is provided. The structure includes a first plate extending from a trench and isolated from a wafer body, and a second plate extending from the trench and isolated from the wafer body and the first plate.Type: ApplicationFiled: July 29, 2008Publication date: February 4, 2010Inventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank
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Publication number: 20100029055Abstract: A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.Type: ApplicationFiled: July 29, 2008Publication date: February 4, 2010Inventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank
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Publication number: 20100025813Abstract: A dual contact trench capacitor and design structure for a dual contact trench capacitor is provided. The structure includes a first plate extending from a trench and isolated from a wafer body, and a second plate extending from the trench and isolated from the wafer body and the first plate.Type: ApplicationFiled: July 29, 2008Publication date: February 4, 2010Inventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank
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Publication number: 20100029056Abstract: A method of manufacturing a dual contact trench capacitor is provided. The method includes a first plate extending from a trench and isolated from a wafer body, and forming a second plate extending from the trench and isolated from the wafer body and the first plate.Type: ApplicationFiled: July 29, 2008Publication date: February 4, 2010Inventors: Timothy W. Kemerer, Jenifer E. Lary, James S. Nakos, Steven M. Shank