Abstract: A semiconductor workpiece processing system for treating a workpiece, such as a semiconductor wafer, is provided. A related operating control method is also provided. The system includes an electrostatic chuck configured to receive a workpiece, and a clamping voltage power supply coupled to the electrostatic chuck. The electrostatic chuck has a clamping electrode assembly, and the clamping voltage power supply is coupled to the clamping electrode assembly. The clamping voltage power supply includes a direct current (DC) voltage generator configured to generate a DC clamping voltage for the clamping electrode assembly, an alternating current (AC) voltage generator configured to generate an AC excitation signal for the clamping electrode assembly, and a processing architecture coupled to the clamping electrode assembly.

Abstract: A semiconductor workpiece processing system for treating a workpiece, such as a semiconductor wafer, is provided. A related operating control method is also provided. The system includes an electrostatic chuck configured to receive a workpiece, and a clamping voltage power supply coupled to the electrostatic chuck. The electrostatic chuck has a clamping electrode assembly, and the clamping voltage power supply is coupled to the clamping electrode assembly. The clamping voltage power supply includes a direct current (DC) voltage generator configured to generate a DC clamping voltage for the clamping electrode assembly, an alternating current (AC) voltage generator configured to generate an AC excitation signal for the clamping electrode assembly, and a processing architecture coupled to the clamping electrode assembly.

Abstract: In one embodiment, an electrostatic chuck includes a body having a top surface facing a wafer and a reflective coating over the top surface. The reflective coating is formed on areas of the top surface that do not contact a wafer so as to not appreciably affect the clamping function of the electrostatic chuck. The reflective coating helps raise the operating temperature of the wafer by reflecting heat radiated from the wafer back onto the wafer. In one embodiment, the reflective coating comprises a material that is relatively good in reflecting radiation in the infrared region.