Patents by Inventor Timothy W. Weidman
Timothy W. Weidman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120269967Abstract: Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described.Type: ApplicationFiled: April 2, 2012Publication date: October 25, 2012Applicant: Applied Materials, Inc.Inventors: Joseph Yudovsky, Garry K. Kwong, Dieter Haas, Steven D. Marcus, Timothy W. Weidman
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Patent number: 8207044Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.Type: GrantFiled: May 18, 2011Date of Patent: June 26, 2012Assignee: Applied Materials, Inc.Inventors: Rajesh Mani, Norman Tam, Timothy W. Weidman, Yoshitaka Yokota
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Patent number: 8207005Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.Type: GrantFiled: March 7, 2011Date of Patent: June 26, 2012Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Rohit Mishra, Michael P. Stewart, Kapila P. Wijekoon, Yonghwa Chris Cha, Tristan Holtam, Vinay Shah
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Patent number: 8183081Abstract: Embodiments of the invention generally provide a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming one or more layers on a backside of a solar cell substrate prior to the texturing process to prevent attack of the backside surface of the substrate. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.Type: GrantFiled: July 16, 2009Date of Patent: May 22, 2012Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Rohit Mishra, Michael P. Stewart, Yonghwa Chris Cha, Kapila P. Wijekoon, Hongbin Fang
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Publication number: 20120122302Abstract: Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.Type: ApplicationFiled: November 3, 2011Publication date: May 17, 2012Applicant: Applied Materials, Inc.Inventors: Timothy W. Weidman, Todd Schroeder
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Publication number: 20120100666Abstract: Embodiments of the invention generally provide a solar cell formation process that includes the formation of metal contacts over heavily doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions.Type: ApplicationFiled: October 26, 2011Publication date: April 26, 2012Applicant: APPLIED MATERIALS ITALIA S.R.L.Inventors: James M. Gee, Asaf Schlezinger, Marco Galiazzo, Andrea Baccini, Timothy W. Weidman, Sunhom Paak, Hongbin Fang, Zhenhua Zhang
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Publication number: 20120088193Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.Type: ApplicationFiled: October 6, 2011Publication date: April 12, 2012Applicant: Applied Materials, Inc.Inventors: Timothy W. Weidman, Timothy Michaelson, Paul Deaton, Nitin K. Ingle, Abhijit Basu Mallick, Amit Chatterjee
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Publication number: 20120088369Abstract: Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.Type: ApplicationFiled: October 6, 2011Publication date: April 12, 2012Applicant: Applied Materials, Inc.Inventors: Timothy W. Weidman, Timothy Michaelson, Paul Deaton
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Publication number: 20120040490Abstract: Embodiments of the invention also generally provide a solar cell formation process that includes the formation of metal contacts over heavly doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used to reliably position a similarly shaped, or patterned, metal contact structure on the patterned heavily doped regions to allow an Ohmic contact to be made. The metal contact structure, such as fingers and busbars, are formed on the heavily doped regions so that a high quality electrical connection can be formed between these two regions.Type: ApplicationFiled: October 2, 2009Publication date: February 16, 2012Applicant: Applied Materials Italia S.R.L.Inventors: Marco Gallazzo, Timothy W. Weidman, Andrea Baccini, Sunhom (Steve) Paak, Hongbin Fang, Zhenhua Zhang
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Publication number: 20110272008Abstract: Embodiments of the invention generally provide methods for forming a multilayer rear surface passivation layer on a solar cell substrate. The method includes forming a silicon oxide sub-layer having a net charge density of less than or equal to 2.1×1011 Coulombs/cm2 on a rear surface of a p-type doped region formed in a substrate comprising semiconductor material, the rear surface opposite a light receiving surface of the substrate and forming a silicon nitride sub-layer on the silicon oxide sub-layer. Embodiments of the invention also include a solar cell device that may be manufactured according methods disclosed herein.Type: ApplicationFiled: May 5, 2011Publication date: November 10, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Hemant P. Mungekar, Mukul Agrawal, Michael P. Stewart, Timothy W. Weidman, Rohit Mishra, Sunhom Paak
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Publication number: 20110217850Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.Type: ApplicationFiled: May 18, 2011Publication date: September 8, 2011Applicant: APPLIED MATERIALS, INC.Inventors: RAJESH MANI, NORMAN TAM, TIMOTHY W. WEIDMAN, YOSHITAKA YOKOTA
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Publication number: 20110183458Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.Type: ApplicationFiled: March 7, 2011Publication date: July 28, 2011Inventors: Timothy W. WEIDMAN, Rohit Mishra, Michael P. Stewart, Kapila P. Wijekoon, Yonghwa Chris Cha, Tristan Holtam, Vinay Shah
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Patent number: 7951637Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.Type: GrantFiled: August 27, 2009Date of Patent: May 31, 2011Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Rohit Mishra, Michael P. Stewart, Kapila P. Wijekoon, Yonghwa Chris Cha, Tristan Holtam, Vinay Shah
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Patent number: 7947561Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.Type: GrantFiled: March 11, 2009Date of Patent: May 24, 2011Assignee: Applied Materials, Inc.Inventors: Rajesh Mani, Norman Tam, Timothy W. Weidman, Yoshitaka Yokota
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Publication number: 20110104850Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed.Type: ApplicationFiled: January 5, 2011Publication date: May 5, 2011Inventors: Timothy W. WEIDMAN, Rohit MISHRA
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Patent number: 7888168Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed.Type: GrantFiled: November 19, 2008Date of Patent: February 15, 2011Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Rohit Mishra
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Patent number: 7827930Abstract: An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.Type: GrantFiled: January 26, 2005Date of Patent: November 9, 2010Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Arulkumar Shanmugasundram, Russell Ellwanger, Ian A. Pancham, Ramakrishna Cheboli, Timothy W. Weidman
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Patent number: 7825044Abstract: Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.Type: GrantFiled: June 17, 2010Date of Patent: November 2, 2010Assignee: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Timothy W. Weidman
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Publication number: 20100255655Abstract: Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.Type: ApplicationFiled: June 17, 2010Publication date: October 7, 2010Applicant: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Timothy W. Weidman
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Patent number: 7745352Abstract: Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.Type: GrantFiled: August 27, 2007Date of Patent: June 29, 2010Assignee: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Srinivas D. Nemani, Timothy W. Weidman