Abstract: An improved Schottky diode structure (4) is formed by retrograde diffusing an N.sup.+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried diode layer (5) formed of relatively slow diffusing N type atoms, preferably Antimony atoms, underlies the diode NWell and electrically couples the diode junction (7) to the diode ohmic contact (9). A diode ohmic contact region (31) underlies the ohmic contact, further coupling the diode junction to the ohmic contact. Preferably, the diode junction is a Platinum-Silicide junction.

Abstract: An improved TTL tristate device with reduced output capacitance incorporates an active discharge sequence of three elements including first and second active transistor elements (Q8, Q7) in an inversion coupling and a third passive element comprising a passive diode cluster (D3, D4, D5) coupled between the base of the second transistor element (Q7) and the enable gate. The passive diode cluster is operatively arranged for delivering base drive current to the base of the second transistor (Q7) when the enable gate (A) is at high potential for operation of the output device in the bistate mode. The passive diode cluster also operatively diverts base drive current away from the base of the second transistor (Q7) when the enable gate (A) is at low potential for operation of the output device in the high impedance third state with reduced output capacitance.