Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.

Abstract: A package includes a building block. The building block includes a device die, an interposer bonded with the device die, and a first encapsulant encapsulating the device die therein. The package further includes a second encapsulant encapsulating the building block therein, and an interconnect structure over the second encapsulant. The interconnect structure has redistribution lines electrically coupling to the device die. A power module is over the interconnect structure. The power module is electrically coupled to the building block through the interconnect structure.

Abstract: The present disclosure, in some embodiments, relates to a bump structure. The bump structure includes a conductive layer and a solder layer. The solder layer is disposed vertically below and laterally between portions of the conductive layer along a cross-section. The conductive layer is continuous between the portions.

Abstract: A method includes placing a plurality of package components over a carrier, encapsulating the plurality of package components in an encapsulant, forming a light-sensitive dielectric layer over the plurality of package components and the encapsulant, exposing the light-sensitive dielectric layer using a lithography mask, and developing the light-sensitive dielectric layer to form a plurality of openings. Conductive features of the plurality of package components are exposed through the plurality of openings. The method further includes forming redistribution lines extending into the openings. One of the redistribution lines has a length greater than about 26 mm. The redistribution lines, the plurality of package components, the encapsulant in combination form a reconstructed wafer.

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: A package structure includes a redistribution layer (RDL) structure, a die, and an encapsulant. The die is attached to the RDL structure through an adhesive layer. The encapsulant is disposed on the RDL structure and laterally encapsulates the die and the adhesive layer. The encapsulant includes a protruding part extending into the RDL structure and having a bottom surface in contact with the RDL structure.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes semiconductor dies, an encapsulant and a redistribution structure. The semiconductor dies are disposed side by side. Each semiconductor die has an active surface, a backside surface, and an inner side surface connecting the active surface and the backside surface. The encapsulant wraps the semiconductor dies and exposes the active surfaces of the semiconductor dies. The redistribution structure is disposed on the encapsulant and the active surfaces of the semiconductor dies. The inner side surfaces of most adjacent semiconductor dies face each other. The redistribution structure establishes single-ended connections between most adjacent semiconductor dies by crossing over the facing inner side surfaces of the most adjacent semiconductor dies.

Abstract: A package structure including an interposer, a semiconductor die, through insulator vias, an insulating encapsulant and a redistribution layer is provided. The interposer includes a core structure having a first and second surface, first metal layers disposed on the first and second surface, second metal layers disposed on the second surface over the first metal layers, and third metal layers disposed on the second surface over the second metal layers. The semiconductor die is disposed on the interposer. The through insulator vias are disposed on the interposer and electrically connected to the plurality of first metal layers. The insulating encapsulant is disposed on the interposer over the first surface and encapsulating the semiconductor die and the plurality of through insulator vias. The redistribution layer is disposed on the insulating encapsulant and electrically connected to the semiconductor die and the plurality of through insulator vias.

Abstract: A three dimensional integrated circuit (3D-IC) module socket system includes an integrated Fan-Out (InFO) adapter having one or more integrated passive devices (IPDs) embedded in the InFO adapter. The InFO adapter is also integrated into the 3D-IC module socket system by stacking the InFO adapter between a socket and a SoW package. The InFO adapter with embedded IPDs allows for more planar area of the SoW package to be available for interfacing the socket and provides a short distance between the embedded IPDs and computing dies of the SoW package which enhances a power distribution network (PDN) performance and improves current handling of the 3D-IC module socket system.

Abstract: A device includes a package. The package includes a plurality of dies, an encapsulant encapsulating the plurality of dies, and a redistribution structure over the plurality of dies and the encapsulant. The device further includes first sockets bonded to a top surface of the redistribution structure and a rigid/flexible substrate bonded to the top surface of the redistribution structure. The rigid/flexible substrate includes a first rigid portion, a second rigid portion, and a flexible portion interposed between the first rigid portion and the second rigid portion. The device further includes second sockets bonded to the first rigid portion of the rigid/flexible substrate and connector modules bonded to the second rigid portion of the rigid/flexible substrate.

Abstract: A device includes a metal pad over a substrate. A passivation layer includes a portion over the metal pad. A post-passivation interconnect (PPI) is electrically coupled to the metal pad, wherein the PPI comprises a portion over the metal pad and the passivation layer. A polymer layer is over the PPI. A dummy bump is over the polymer layer, wherein the dummy bump is electrically insulated from conductive features underlying the polymer layer.

Abstract: A semiconductor device, a circuit board structure and a manufacturing forming thereof are provided. A circuit board structure includes a core layer, a first build-up layer and a second build-up layer. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The circuit board structure has a plurality of stress releasing trenches extending into the first build-up layer and the second build-up layer.

Abstract: A package structure and a method of manufacturing the same are provided. The package structure includes a die, a RDL structure, an encapsulant and a conductive terminal. The die is on a redistribution layer (RDL) structure. The RDL structure comprises a polymer layer and a RDL in the polymer layer. The encapsulant is on the RDL structure and laterally aside the die. The encapsulant comprises a body part and an extending part underlying the body part. The conductive terminal is electrically connected to the RDL structure and the die. The body part of the encapsulant encapsulates sidewalls of the die. The extending part of the encapsulant extends into the polymer layer.

Abstract: A semiconductor package structure and manufacturing method thereof are provided. The semiconductor package structure includes a package structure and a rigid-flexible substrate. The package structure includes semiconductor dies, a molding compound and a redistribution layer. The molding compound laterally encapsulates the semiconductor dies. The redistribution layer is disposed at a front side of the semiconductor dies and electrically connected to the semiconductor dies. The rigid-flexible substrate is disposed at a side of the redistribution layer opposite to the semiconductor dies, and includes rigid structures, a flexible core and a circuit layer. The rigid structures respectively have an interconnection structure therein. The interconnection structures are electrically connected to the redistribution layer. The flexible core laterally penetrates and connects the rigid structures.

Abstract: A package structure including an interposer, a semiconductor die, through insulator vias, an insulating encapsulant and a redistribution layer is provided. The interposer includes a core structure having a first and second surface, first metal layers disposed on the first and second surface, second metal layers disposed on the second surface over the first metal layers, and third metal layers disposed on the second surface over the second metal layers. The semiconductor die is disposed on the interposer. The through insulator vias are disposed on the interposer and electrically connected to the plurality of first metal layers. The insulating encapsulant is disposed on the interposer over the first surface and encapsulating the semiconductor die and the plurality of through insulator vias. The redistribution layer is disposed on the insulating encapsulant and electrically connected to the semiconductor die and the plurality of through insulator vias.

Abstract: A package includes a first and a second package component. The first package component includes a first metal trace and a second metal trace at the surface of the first package component. The second metal trace is parallel to the first metal trace. The second metal trace includes a narrow metal trace portion having a first width, and a wide metal trace portion having a second width greater than the first width connected to the narrow metal trace portion. The second package component is over the first package component. The second package component includes a metal bump overlapping a portion of the first metal trace, and a conductive connection bonding the metal bump to the first metal trace. The conductive connection contacts a top surface and sidewalls of the first metal trace. The metal bump is neighboring the narrow metal trace portion.

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a conductive pad formed over a substrate, and a conductive structure formed over the conductive pad. The conductive structure has a curved top surface. The semiconductor device structure also includes a protection layer between the conductive pad and the conductive structure. A lowest point of the curved top surface of the conductive structure is higher than a topmost surface of the protection layer.

Abstract: A method for forming a semiconductor device structure and method for forming the same are provided. The method includes forming a conductive pad over the substrate, and forming a protection layer over the conductive pad. The method also includes forming a conductive structure accessibly arranged through the protection layer and electrically connected to the conductive pad, and the conductive structure has a curved top surface. A lowest point of the curved top surface of the conductive structure is higher than a topmost surface of the protection layer.