Patents by Inventor Tin-Hao Kuo

Tin-Hao Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240379637
    Abstract: A package includes a building block. The building block includes a device die, an interposer bonded with the device die, and a first encapsulant encapsulating the device die therein. The package further includes a second encapsulant encapsulating the building block therein, and an interconnect structure over the second encapsulant. The interconnect structure has redistribution lines electrically coupling to the device die. A power module is over the interconnect structure. The power module is electrically coupled to the building block through the interconnect structure.
    Type: Application
    Filed: July 19, 2024
    Publication date: November 14, 2024
    Inventors: Chen-Hua Yu, Tin-Hao Kuo
  • Patent number: 12136612
    Abstract: A package includes a building block. The building block includes a device die, an interposer bonded with the device die, and a first encapsulant encapsulating the device die therein. The package further includes a second encapsulant encapsulating the building block therein, and an interconnect structure over the second encapsulant. The interconnect structure has redistribution lines electrically coupling to the device die. A power module is over the interconnect structure. The power module is electrically coupled to the building block through the interconnect structure.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: November 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Tin-Hao Kuo
  • Publication number: 20240363591
    Abstract: An embodiment includes a first package component including a first integrated circuit die and a first encapsulant at least partially surrounding the first integrated circuit die. The device also includes a redistribution structure on the first encapsulant and coupled to the first integrated circuit die. The device also includes a first thermal module coupled to the first integrated circuit die. The device also includes a second package component bonded to the first package component, the second package component including a power module attached to the first package component, the power module including active devices. The device also includes a second thermal module coupled to the power module. The device also includes a mechanical brace extending from a top surface of the second thermal module to a bottom surface of the first thermal module, the mechanical brace physically contacting the first thermal module and the second thermal module.
    Type: Application
    Filed: July 9, 2024
    Publication date: October 31, 2024
    Inventors: Chen-Hua Yu, Chi-Hui Lai, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu
  • Publication number: 20240321757
    Abstract: A manufacturing method of a semiconductor package is provided. The method includes: providing an initial rigid-flexible substrate, wherein the initial rigid-flexible substrate includes rigid structures and a flexible core laterally penetrating through the rigid structures, and further includes a supporting frame connected to the rigid structures; bonding a package structure onto the initial rigid-flexible substrate, wherein the package structure includes semiconductor dies and an encapsulant laterally surrounding the semiconductor dies; and removing the supporting frame.
    Type: Application
    Filed: June 5, 2024
    Publication date: September 26, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chuei-Tang Wang, Chen-Hua Yu, Chung-Shi Liu, Chih-Yuan Chang, Jiun-Yi Wu, Jeng-Shien Hsieh, Tin-Hao Kuo
  • Patent number: 12087718
    Abstract: The present disclosure relates to an integrated chip structure having a first substrate including a plurality of transistor devices disposed within a semiconductor material. An interposer substrate includes vias extending through a silicon layer. A copper bump is disposed between the first substrate and the interposer substrate. The copper bump has a sidewall defining a recess. Solder is disposed over the copper bump and continuously extending from over the copper bump to within the recess. A conductive layer is disposed between the first substrate and the interposer substrate and is separated from the copper bump by the solder.
    Type: Grant
    Filed: April 14, 2023
    Date of Patent: September 10, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Horng Chang, Tin-Hao Kuo, Chen-Shien Chen, Yen-Liang Lin
  • Patent number: 12074143
    Abstract: An embodiment includes a first package component including a first integrated circuit die and a first encapsulant at least partially surrounding the first integrated circuit die. The device also includes a redistribution structure on the first encapsulant and coupled to the first integrated circuit die. The device also includes a first thermal module coupled to the first integrated circuit die. The device also includes a second package component bonded to the first package component, the second package component including a power module attached to the first package component, the power module including active devices. The device also includes a second thermal module coupled to the power module. The device also includes a mechanical brace extending from a top surface of the second thermal module to a bottom surface of the first thermal module, the mechanical brace physically contacting the first thermal module and the second thermal module.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: August 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Hua Yu, Chi-Hui Lai, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu
  • Patent number: 12040281
    Abstract: A manufacturing method of a semiconductor package is provided. The method includes: providing an initial rigid-flexible substrate, wherein the initial rigid-flexible substrate includes rigid structures and a flexible core laterally penetrating through the rigid structures, and further includes a supporting frame connected to the rigid structures; bonding a package structure onto the initial rigid-flexible substrate, wherein the package structure includes semiconductor dies and an encapsulant laterally surrounding the semiconductor dies; and removing the supporting frame.
    Type: Grant
    Filed: August 13, 2021
    Date of Patent: July 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chuei-Tang Wang, Chen-Hua Yu, Chung-Shi Liu, Chih-Yuan Chang, Jiun-Yi Wu, Jeng-Shien Hsieh, Tin-Hao Kuo
  • Patent number: 12014979
    Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: June 18, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo Lung Pan, Shu-Rong Chun, Teng-Yuan Lo, Hung-Yi Kuo, Chih-Horng Chang, Tin-Hao Kuo, Hao-Yi Tsai
  • Patent number: 12014976
    Abstract: A chip package structure includes an interposer structure that contains a package-side redistribution structure, an interposer core assembly, and a die-side redistribution structure. The interposer core assembly includes at least one silicon substrate interposer, and each of the at least one silicon substrate interposer includes a respective silicon substrate, a respective set of through-silicon via (TSV) structures vertically extending through the respective silicon substrate, a respective set of interconnect-level dielectric layers embedding a respective set of metal interconnect structures, and a respective set of metal bonding structures that are electrically connected to the die-side redistribution structure. The chip package structure includes at least two semiconductor dies that are attached to the die-side redistribution structure, and an epoxy molding compound (EMC) multi-die frame that laterally encloses the at least two semiconductor dies.
    Type: Grant
    Filed: March 28, 2023
    Date of Patent: June 18, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kuo Lung Pan, Yu-Chia Lai, Teng-Yuan Lo, Mao-Yen Chang, Po-Yuan Teng, Chen-Hua Yu, Chung-Shi Liu, Hao-Yi Tsai, Tin-Hao Kuo
  • Patent number: 12009281
    Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and a metallization element. The semiconductor die has an active side and an opposite side opposite to the active side. The redistribution circuit structure is disposed on the active side and is electrically coupled to the semiconductor die. The metallization element has a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: June 11, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Wei Chen, Hao-Yi Tsai, Kuo-Lung Pan, Tin-Hao Kuo, Po-Yuan Teng, Chi-Hui Lai
  • Publication number: 20240170414
    Abstract: A semiconductor package includes an encapsulated semiconductor device, a backside redistribution structure, and a front side redistribution structure. The encapsulated semiconductor device includes an encapsulating material and a semiconductor device encapsulated by the encapsulating material. The backside redistribution structure is disposed on a backside of the encapsulated semiconductor device and includes a redistribution circuit layer and a first patterned dielectric layer. The redistribution circuit layer has a circuit pattern and a dummy pattern electrically insulated from the circuit pattern. The dummy pattern is overlapped with the semiconductor device from a top view of the semiconductor package. The first patterned dielectric layer is disposed on the redistribution circuit layer and includes a marking pattern disposed on the dummy pattern and revealing a part of the dummy pattern.
    Type: Application
    Filed: January 24, 2024
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Hsien Chiang, Hsien-Ming Tu, Hao-Yi Tsai, Tin-Hao Kuo
  • Patent number: 11990381
    Abstract: In an embodiment, a device includes: a package component including: integrated circuit dies; an encapsulant around the integrated circuit dies; a redistribution structure over the encapsulant and the integrated circuit dies, the redistribution structure being electrically coupled to the integrated circuit dies; sockets over the redistribution structure, the sockets being electrically coupled to the redistribution structure; and a support ring over the redistribution structure and surrounding the sockets, the support ring being disposed along outermost edges of the redistribution structure, the support ring at least partially laterally overlapping the redistribution structure.
    Type: Grant
    Filed: November 14, 2022
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Rong Chun, Kuo Lung Pan, Tin-Hao Kuo, Hao-Yi Tsai, Pei-Hsuan Lee, Chien Ling Hwang, Yu-Chia Lai, Po-Yuan Teng, Chen-Hua Yu
  • Publication number: 20240145257
    Abstract: A method includes placing a plurality of package components over a carrier, encapsulating the plurality of package components in an encapsulant, forming a light-sensitive dielectric layer over the plurality of package components and the encapsulant, exposing the light-sensitive dielectric layer using a lithography mask, and developing the light-sensitive dielectric layer to form a plurality of openings. Conductive features of the plurality of package components are exposed through the plurality of openings. The method further includes forming redistribution lines extending into the openings. One of the redistribution lines has a length greater than about 26 mm. The redistribution lines, the plurality of package components, the encapsulant in combination form a reconstructed wafer.
    Type: Application
    Filed: January 11, 2024
    Publication date: May 2, 2024
    Inventors: Chen-Hua Yu, Tin-Hao Kuo
  • Patent number: 11961810
    Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yu-Wei Lin, Sheng-Yu Wu, Yu-Jen Tseng, Tin-Hao Kuo, Chen-Shien Chen
  • Publication number: 20240088050
    Abstract: A semiconductor device includes a die, an encapsulant over a front-side surface of the die, a redistribution structure on the encapsulant, a thermal module coupled to the back-side surface of the die, and a bolt extending through the redistribution structure and the thermal module. The die includes a chamfered corner. The bolt is adjacent to the chamfered corner.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Inventors: Chen-Hua Yu, Wei-Kang Hsieh, Shih-Wei Chen, Tin-Hao Kuo, Hao-Yi Tsai
  • Patent number: 11923318
    Abstract: A method of manufacturing a semiconductor package includes the following steps. A backside redistribution structure is formed, wherein the backside redistribution structure comprises a first dielectric layer, and a redistribution metal layer over the first dielectric layer and comprising a dummy pattern. A semiconductor device is provided over the backside redistribution structure, wherein an active surface of the semiconductor device faces away from the backside redistribution structure, the semiconductor device is electrically insulated from the dummy pattern and overlapped with the dummy pattern from a top view of the semiconductor package. A front side redistribution structure is formed over the semiconductor device, wherein the front side redistribution structure is electrically connected to the semiconductor device. A patterning process is performed on the first dielectric layer to form a marking pattern opening exposing a part of the dummy pattern.
    Type: Grant
    Filed: August 29, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Hsien Chiang, Hsien-Ming Tu, Hao-Yi Tsai, Tin-Hao Kuo
  • Patent number: 11923349
    Abstract: A semiconductor structure includes a die and a first connector. The first connector is disposed on the die. The first connector includes a first connecting housing, a first connecting element and a first connecting portion. The first connecting element is electrically connected to the die and disposed at a first side of the first connecting housing. The first connecting portion is disposed at a second side different from the first side of the first connecting housing, wherein the first connecting portion is one of a hole and a protrusion with respect to a surface of the second side of the first connecting housing.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Hui Lai, Chen-Hua Yu, Chung-Shi Liu, Hao-Yi Tsai, Tin-Hao Kuo
  • Publication number: 20240071981
    Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.
    Type: Application
    Filed: November 1, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
  • Publication number: 20240071825
    Abstract: Systems, devices and methods of manufacturing a system on silicon wafer (SoSW) device and package are described herein. A plurality of functional dies is formed in a silicon wafer. Different sets of masks are used to form different types of the functional dies in the silicon wafer. A first redistribution structure is formed over the silicon wafer and provides local interconnects between adjacent dies of the same type and/or of different types. A second redistribution structure may be formed over the first redistribution layer and provides semi-global and/or global interconnects between non-adjacent dies of the same type and/or of different types. An optional backside redistribution structure may be formed over a second side of the silicon wafer opposite the first redistribution layer. The optional backside redistribution structure may provide backside interconnects between functional dies of different types.
    Type: Application
    Filed: November 7, 2023
    Publication date: February 29, 2024
    Inventors: Chen-Hua Yu, Wei Ling Chang, Chuei-Tang Wang, Tin-Hao Kuo, Che-Wei Hsu
  • Patent number: 11908706
    Abstract: A method includes placing a plurality of package components over a carrier, encapsulating the plurality of package components in an encapsulant, forming a light-sensitive dielectric layer over the plurality of package components and the encapsulant, exposing the light-sensitive dielectric layer using a lithography mask, and developing the light-sensitive dielectric layer to form a plurality of openings. Conductive features of the plurality of package components are exposed through the plurality of openings. The method further includes forming redistribution lines extending into the openings. One of the redistribution lines has a length greater than about 26 mm. The redistribution lines, the plurality of package components, the encapsulant in combination form a reconstructed wafer.
    Type: Grant
    Filed: April 25, 2022
    Date of Patent: February 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Tin-Hao Kuo