Abstract: A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.

Abstract: A package structure includes a bottom plate, a semiconductor package, a top plate, a screw and an anti-loosening coating. The semiconductor package is disposed over the bottom plate. The top plate is disposed over the semiconductor package, and includes an internal thread in a screw hole of the top plate. The screw penetrates through the bottom plate, the semiconductor package and the top plate, and includes an external thread. The external thread of the screw is engaged to the internal thread of the top plate, and the anti-loosening coating is adhered between the external thread and the internal thread.

Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and a metallization element. The semiconductor die has an active side and an opposite side opposite to the active side. The redistribution circuit structure is disposed on the active side and is electrically coupled to the semiconductor die. The metallization element has a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side.

Abstract: Provided is a package structure including a composite wafer, a plurality of dies, an underfill, and a plurality of dam structures. The composite wafer has a first surface and a second surface opposite to each other. The composite wafer includes a plurality of seal rings dividing the composite wafer into a plurality of packages; and a plurality of through holes respectively disposed between the seal rings and penetrating through the first and second surfaces. The dies are respectively bonded onto the packages at the first surface by a plurality of connectors. The underfill laterally encapsulates the connectors. The dam structures are disposed on the first surface of the composite wafer to separate the underfill from the through holes.

Abstract: A semiconductor device has a top metal layer, a first passivation layer over the top metal layer, a first redistribution layer over the first passivation layer, a first polymer layer, and a first conductive via extending through the first polymer layer. The first polymer layer is in physical contact with the first passivation layer.

Abstract: A method includes forming a plurality of dielectric layers, which processes include forming a first plurality of dielectric layers having first thicknesses, and forming a second plurality of dielectric layers having second thicknesses smaller than the first thicknesses. The first plurality of dielectric layers and the second plurality of dielectric layers are laid out alternatingly. The method further includes forming a plurality of redistribution lines connected to form a conductive path, which processes include forming a first plurality of redistribution lines, each being in one of the first plurality of dielectric layers, and forming a second plurality of redistribution lines, each being in one of the second plurality of dielectric layers.

Abstract: A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

Abstract: A method of manufacturing a semiconductor package includes the following steps. A backside redistribution structure is formed, wherein the backside redistribution structure comprises a first dielectric layer, and a redistribution metal layer over the first dielectric layer and comprising a dummy pattern. A semiconductor device is provided over the backside redistribution structure, wherein an active surface of the semiconductor device faces away from the backside redistribution structure, the semiconductor device is electrically insulated from the dummy pattern and overlapped with the dummy pattern from a top view of the semiconductor package. A front side redistribution structure is formed over the semiconductor device, wherein the front side redistribution structure is electrically connected to the semiconductor device. A patterning process is performed on the first dielectric layer to form a marking pattern opening exposing a part of the dummy pattern.

Abstract: A method includes encapsulating a plurality of package components in an encapsulant, and forming a first plurality of redistribution layers over and electrically coupling to the plurality of package components. The first plurality of redistribution layers have a plurality of power/ground pad stacks, with each of the plurality of power/ground pad stacks having a pad in each of the first plurality of redistribution layers. The plurality of power/ground pad stacks include a plurality of power pad stacks, and a plurality of ground pad stacks. At least one second redistribution layer is formed over the first plurality of redistribution layers. The second redistribution layer(s) include power lines and electrical grounding lines electrically connecting to the plurality of power/ground pad stacks.

Abstract: A chip package including a first semiconductor die, a support structure and a second semiconductor die is provided. The first semiconductor die includes a first dielectric layer and a plurality of conductive vias, the first dielectric layer includes a first region and a second region, the conductive vias is embedded in the first region of the first dielectric layer; a plurality of conductive pillars is disposed on and electrically connected to the conductive vias. The second semiconductor die is stacked over the support structure and the second region of the first dielectric layer; and an insulating encapsulant encapsulates the first semiconductor die, the second semiconductor die, the support structure and the conductive pillars, wherein the second semiconductor die is electrically connected to the first semiconductor die through the conductive pillars.

Abstract: A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.

Abstract: A manufacturing method of a semiconductor package is provided. The method includes: providing an initial rigid-flexible substrate, wherein the initial rigid-flexible substrate includes rigid structures and a flexible core laterally penetrating through the rigid structures, and further includes a supporting frame connected to the rigid structures; bonding a package structure onto the initial rigid-flexible substrate, wherein the package structure includes semiconductor dies and an encapsulant laterally surrounding the semiconductor dies; and removing the supporting frame.

Abstract: A semiconductor device, a circuit board structure and a manufacturing forming thereof are provided. A circuit board structure includes a core layer, a first build-up layer and a second build-up layer. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The circuit board structure has a plurality of stress releasing trenches extending into the first build-up layer and the second build-up layer.

Abstract: A packaged semiconductor device including an integrated passive device-containing package component disposed between a power module and an integrated circuit-containing package and a method of forming the same are disclosed. In an embodiment, a device includes a first package component including a first integrated circuit die; a first encapsulant at least partially surrounding the first integrated circuit die; and a redistribution structure on the first encapsulant and coupled to the first integrated circuit die; a second package component bonded to the first package component, the second package component including an integrated passive device; and a second encapsulant at least partially surrounding the integrated passive device; and a power module attached to the first package component through the second package component.

Abstract: A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.

Abstract: A package structure includes a first die, an encapsulant and a securing element. The encapsulant encapsulates the first die. The securing element penetrates through the encapsulant and a corner of the first die and electrically isolated from the first die.

Abstract: A semiconductor package includes a first wafer, a second wafer, and an interconnect. The first wafer includes a first die, a first encapsulating material encapsulating the first die, and a first redistribution structure disposed over the first die and the first encapsulating material. The second wafer includes a second die, a second encapsulating material encapsulating the second die, and a second redistribution structure disposed over the second die and the second encapsulating material, wherein the second redistribution structure faces the first redistribution structure. The interconnect is disposed between the first wafer and the second wafer and electrically connecting the first redistribution structure and the second redistribution structure, wherein the interconnect includes a substrate and a plurality of through vias extending through the substrate for connecting the first redistribution structure and the second redistribution structure.

Abstract: A package structure includes a redistribution layer (RDL) structure, a die, and an encapsulant. The die is attached to the RDL structure through an adhesive layer. The encapsulant is disposed on the RDL structure and laterally encapsulates the die and the adhesive layer. The encapsulant includes a protruding part extending into the RDL structure and having a bottom surface in contact with the RDL structure.

Abstract: In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.