Patents by Inventor Tin Myint Ko
Tin Myint Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220393653Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.Type: ApplicationFiled: August 17, 2022Publication date: December 8, 2022Inventors: Peter J. Zampardi, JR., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas, Hong Shen, Mehran Janani, Jens Albrecht Riege, Hsiang-Chih Sun, David Steven Ripley, Philip John Lehtola
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Patent number: 11451199Abstract: One aspect of this disclosure is a power amplifier system that includes a control interface, a power amplifier, a passive component, and a bias circuit. The power amplifier and the passive component can be on a first die. The bias circuit can be on a second die. The control interface can operate as a serial interface or as a general purpose input/output interface. The power amplifier can be controllable based at least partly on an output signal from the control interface. The bias circuit can generate a bias signal based at least partly on an indication of the electrical property of the passive component. Other embodiments of the system are provided along with related methods and components thereof.Type: GrantFiled: July 30, 2020Date of Patent: September 20, 2022Assignee: Skyworks Solutions, Inc.Inventors: David Steven Ripley, Philip John Lehtola, Peter J. Zampardi, Jr., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas
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Publication number: 20210050826Abstract: One aspect of this disclosure is a power amplifier system that includes a control interface, a power amplifier, a passive component on a same die as the power amplifier, and a bias circuit on a different die than the power amplifier. The control interface can operate as a serial interface or as a general purpose input/output interface. The power amplifier can be controllable based at least partly on an output signal from the control interface. The bias circuit can generate a bias signal based at least partly on an indication of the electrical property of the passive component. Other embodiments of the system are provided along with related methods and components thereof.Type: ApplicationFiled: July 30, 2020Publication date: February 18, 2021Inventors: David Steven Ripley, Philip John Lehtola, Peter J. Zampardi, JR., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas
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Patent number: 10771024Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm?3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.Type: GrantFiled: August 16, 2018Date of Patent: September 8, 2020Assignee: Skyworks Solutions, Inc.Inventors: Peter J. Zampardi, Jr., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas, David Steven Ripley, Philip John Lehtola
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Publication number: 20190158045Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm?3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.Type: ApplicationFiled: August 16, 2018Publication date: May 23, 2019Inventors: Peter J. Zampardi, JR., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas, David Steven Ripley, Philip John Lehtola
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Patent number: 10116274Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.Type: GrantFiled: July 21, 2016Date of Patent: October 30, 2018Assignee: Skyworks Solutions, Inc.Inventors: David Steven Ripley, Philip John Lehtola, Peter J. Zampardi, Jr., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas
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Publication number: 20170019076Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.Type: ApplicationFiled: July 21, 2016Publication date: January 19, 2017Inventors: David Steven Ripley, Philip John Lehtola, Peter J. Zampardi, JR., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas
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Patent number: 9520835Abstract: One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.Type: GrantFiled: April 14, 2015Date of Patent: December 13, 2016Assignee: Skyworks Solutions, Inc.Inventors: Tin Myint Ko, Philip John Lehtola, Matthew Thomas Ozalas, David Steven Ripley, Hongxiao Shao, Peter J. Zampardi, Jr.
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Patent number: 9490751Abstract: One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.Type: GrantFiled: April 14, 2015Date of Patent: November 8, 2016Assignee: Skyworks Solutions, Inc.Inventors: Tin Myint Ko, Philip John Lehtola, Matthew Thomas Ozalas, David Steven Ripley, Hongxiao Shao, Peter J. Zampardi, Jr.
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Patent number: 9419567Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.Type: GrantFiled: June 13, 2013Date of Patent: August 16, 2016Assignee: SKYWORKS SOLUTIONS, INC.Inventors: David Steven Ripley, Philip John Lehtola, Peter J. Zampardi, Jr., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas
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Publication number: 20150326183Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.Type: ApplicationFiled: April 14, 2015Publication date: November 12, 2015Inventors: Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, JR., Guohao Zhang
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Publication number: 20150326181Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.Type: ApplicationFiled: April 14, 2015Publication date: November 12, 2015Inventors: Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, JR., Guohao Zhang
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Publication number: 20150326182Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.Type: ApplicationFiled: April 14, 2015Publication date: November 12, 2015Inventors: Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, JR., Guohao Zhang
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Patent number: 9041472Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.Type: GrantFiled: June 13, 2013Date of Patent: May 26, 2015Assignee: Skyworks Solutions, Inc.Inventors: Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, Jr., Guohao Zhang
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Publication number: 20140002188Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.Type: ApplicationFiled: June 13, 2013Publication date: January 2, 2014Applicant: SKYWORKS SOLUTIONS, INC.Inventors: Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, JR., Guohao Zhang
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Publication number: 20130344825Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.Type: ApplicationFiled: June 13, 2013Publication date: December 26, 2013Inventors: David Steven Ripley, Philip John Lehtola, Peter J. Zampardi, JR., Hongxiao Shao, Tin Myint Ko, Matthew Thomas Ozalas