Patents by Inventor Tina L. Lamers
Tina L. Lamers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10340885Abstract: A bulk acoustic wave (BAW) resonator having a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode. The first electrode is of a first electrode material. The second electrode is of a second electrode material. The piezoelectric layer is of a piezoelectric material doped with at least one rare earth element. The BAW resonator has a resonant frequency dependent at least in part on respective thicknesses and materials of the first electrode, the second electrode and the piezoelectric layer. The resonant frequency has a temperature coefficient. At least one of the first electrode and the second electrode includes a niobium alloy electrode material that, relative to molybdenum as the electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator.Type: GrantFiled: May 8, 2014Date of Patent: July 2, 2019Assignee: Avago Technologies International Sales Pte. LimitedInventors: Kevin J. Grannen, Phil Nikkel, Tangshiun Yeh, Chris Feng, Tina L. Lamers, John Choy
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Patent number: 9590165Abstract: An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode.Type: GrantFiled: February 28, 2014Date of Patent: March 7, 2017Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Qiang Zou, Chris Feng, Phil Nikkel, Kevin J. Grannen, Tangshiun Yeh, Dariusz Burak, John Choy, Tina L. Lamers
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Patent number: 9520855Abstract: A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.Type: GrantFiled: February 26, 2014Date of Patent: December 13, 2016Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Chris Feng, John Choy, Phil Nikkel, Kevin J. Grannen, Tina L. Lamers
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Patent number: 9450167Abstract: An acoustic resonator comprises: an acoustic resonator device comprises: a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a first interlayer disposed on the first electrical conductive layer; a buried temperature compensation layer disposed over the first interlayer; a second interlayer disposed over the temperature compensation layer; a second electrically conductive layer disposed over the second interlayer, a piezoelectric layer disposed over the composite first electrode; and a second electrode disposed over the piezoelectric layer.Type: GrantFiled: September 27, 2013Date of Patent: September 20, 2016Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Qiang Zou, Donald Lee, Martha K. Small, Frank Bi, Tina L. Lamers, Richard C. Ruby
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Patent number: 9401691Abstract: A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length.Type: GrantFiled: April 30, 2014Date of Patent: July 26, 2016Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Qiang Zou, Chris Feng, Phil Nikkel, John Choy, Alexandre Augusto Shirakawa, Tina L. Lamers, Sook Ching Chang, Dariusz Burak
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Publication number: 20150326200Abstract: A bulk acoustic wave (BAW) resonator having a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode. The first electrode is of a first electrode material. The second electrode is of a second electrode material. The piezoelectric layer is of a piezoelectric material doped with at least one rare earth element. The BAW resonator has a resonant frequency dependent at least in part on respective thicknesses and materials of the first electrode, the second electrode and the piezoelectric layer. The resonant frequency has a temperature coefficient. At least one of the first electrode and the second electrode includes a niobium alloy electrode material that, relative to molybdenum as the electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator.Type: ApplicationFiled: May 8, 2014Publication date: November 12, 2015Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Kevin J. Grannen, Phil Nikkel, Tangshiun Yeh, Chris Feng, Tina L. Lamers, John Choy
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Publication number: 20150318837Abstract: A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length.Type: ApplicationFiled: April 30, 2014Publication date: November 5, 2015Inventors: Qiang Zou, Chris Feng, Phil Nikkel, John Choy, Alexandre Augusto Shirakawa, Tina L. Lamers, Sook Ching Chang, Dariusz Burak
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Publication number: 20150244346Abstract: A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.Type: ApplicationFiled: February 26, 2014Publication date: August 27, 2015Applicant: Avago Technologies General IP (Singapore) Pte. LtdInventors: Chris Feng, John Choy, Phil Nikkel, Kevin J. Grannen, Tina L. Lamers
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Publication number: 20140292150Abstract: An acoustic resonator comprises: an acoustic resonator device comprises: a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a first interlayer disposed on the first electrical conductive layer; a buried temperature compensation layer disposed over the first interlayer; a second interlayer disposed over the temperature compensation layer; a second electrically conductive layer disposed over the second interlayer, a piezoelectric layer disposed over the composite first electrode; and a second electrode disposed over the piezoelectric layer.Type: ApplicationFiled: September 27, 2013Publication date: October 2, 2014Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Qiang Zou, Donald Lee, Martha K. Small, Frank Bi, Tina L. Lamers, Richard C. Ruby
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Publication number: 20140175950Abstract: An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode.Type: ApplicationFiled: February 28, 2014Publication date: June 26, 2014Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Qiang Zou, Chris Feng, Phil Nikkel, Kevin J. Grannen, Tangshiun Yeh, Dariusz Burak, John Choy, Tina L. Lamers