Patents by Inventor Tina Lamers

Tina Lamers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics
    Patent number: 9225313
    Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yttrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.
    Type: Grant
    Filed: October 27, 2012
    Date of Patent: December 29, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Paul Bradley, John D. Larson, III, Steve Gilbert, Kevin J. Grannen, Ivan Ionash, Chris Feng, Tina Lamers, John Choy
  • Bulk acoustic wave resonator having piezoelectric layer with multiple dopants
    Patent number: 9136819
    Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.
    Type: Grant
    Filed: October 27, 2012
    Date of Patent: September 15, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Kevin J. Grannen, Ivan Ionash, Chris Feng, Tina Lamers, John Choy
  • BULK ACOUSTIC WAVE RESONATOR HAVING PIEZOELECTRIC LAYER WITH MULTIPLE DOPANTS
    Publication number: 20140118090
    Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.
    Type: Application
    Filed: October 27, 2012
    Publication date: May 1, 2014
    Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Kevin J. Grannen, Ivan Ionash, Chris Feng, Tina Lamers, John Choy
  • BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER WITH IMPROVED PIEZOELECTRIC CHARACTERISTICS
    Publication number: 20140118089
    Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yittrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.
    Type: Application
    Filed: October 27, 2012
    Publication date: May 1, 2014
    Inventors: Paul Bradley, John D. Larson, III, Steve Gilbert, Kevin J. Grannen, Ivan Ionash, Chris Feng, Tina Lamers, John Choy