Abstract: A robot includes a limit device and an energy storehouse, the limiting device may lock or loosen a battery opened in the energy storehouse, the limiting device includes a first connecting member, a transmission rod, and a second connecting member. The first connecting member includes a first main body portion and two first connecting elements arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod includes a first end and a second end arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member includes two indexing buckles arranged at intervals, each of the indexing buckles includes a first limiting groove and a second limiting groove.

Abstract: Some embodiments of the present disclosure relate to an integrated chip, including a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. A pair of metal lines are disposed over the dielectric layer and laterally spaced apart from one another by a cavity. A barrier layer structure extends along nearest neighboring sidewalls of the pair of metal lines such that the cavity is defined by inner sidewalls of the barrier layer structure and a top surface of the dielectric layer.

Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: An electronic device includes a sustaining layer, multiple substrates, multiple photoelectric units, and multiple signal layers. The substrates are arranged on a contact surface of the sustaining layer. A first end edge of at least one substrate approaches a first end edge of the sustaining layer, and a first side edge of one substrate is adjacent to a second side edge of another substrate. The photoelectric units are arranged on the first or/and second surfaces of the substrates. The signal layers are arranged on the substrates and electrically connected to the photoelectric units.

Abstract: A system includes a processor and a memory storing software code and a machine learning (ML) model. The software code is executed to receive contextual data samples each including raw data and a descriptive label, for each contextual data sample: search a database for a data pattern matching the raw data, determine, when the data pattern is detected, whether the data pattern is correlated with an anomalous event, and generate, when the correlation is determined, training data including a label identifying the anomalous event, and the raw data, the data pattern, or both, to provide one of multiple training data samples, wherein the training data samples describe anomalous events corresponding respectively to the raw data, the data pattern, or both. The software code is further executed to train the ML model, using the training data samples, to provide a trained predictive ML model configured to predict the anomalous events.

Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: Provided are a package structure having stacked semiconductor dies with wavy sidewalls and a method of forming the same. The package structure includes: a first die and a second die bonded together; a first encapsulant laterally encapsulating the first die; and a second encapsulant laterally encapsulating the second die, wherein a second interface of the second die in contact with the second encapsulant is a wavy interface in a cross-sectional plane.

Abstract: Provided is a semiconductor device including a substrate, a channel layer, a gate structure, a first doped region, a second doped region, a third doped region and a channel cap layer. The channel layer is located on the substrate. The channel layer has a trench. The gate structure is disposed in the trench. The first doped region and the second doped region are located in the channel layer on two sides of the gate structure. The third doped region is located in the substrate below the channel layer. The channel cap layer is located between the gate structure and the first doped region, between the gate structure and the second doped region, and between the gate structure and the channel layer. An energy band gap of the channel cap layer is larger than an energy band gap of the channel layer.

Abstract: The present disclosure is directed to method for the fabrication of spacer structures between source/drain (S/D) epitaxial structures and metal gate structures in nanostructure transistors. The method includes forming a fin structure with alternating first and second nanostructure elements on a substrate. The method also includes etching edge portions of the first nanostructure elements in the fin structure to form cavities. Further, depositing a spacer material on the fin structure to fill the cavities and removing a portion of the spacer material in the cavities to form an opening in the spacer material. In addition, the method includes forming S/D epitaxial structures on the substrate to abut the fin structure and the spacer material so that sidewall portions of the S/D epitaxial structures seal the opening in the spacer material to form an air gap in the spacer material.

Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.

Abstract: A silicon carbide semiconductor device comprises a silicon carbide substrate, a drift layer, a plurality of first doped regions, a plurality of second doped regions, a plurality of third doped regions, a plurality of trenches and a gate electrode. The first doped regions are disposed in the drift layer and form a plurality of first p-n junctions and a plurality of JFET regions with the drift layer. The second doped regions are disposed within the first doped regions and form a plurality of second p-n junctions with the first doped regions. The third doped regions are disposed in the first doped regions and adjacent to the second doped regions. The trenches penetrate into the drift layer and run horizontally through the JFET regions. The gate electrode is disposed over a main surface and in the trenches, which is electrically isolated from the drift layer by a gate insulating layer.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.

Abstract: An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.

Abstract: The present disclosure provides intelligent radio frequency interference mitigation in a computing platform. The computing platform includes a processor, a memory, a system clock and a wireless network interface. The system clock can be controlled so that the processor and/or the memory may operate at a slow frequency or a fast frequency. The wireless network may operate on a radio channel that experiences radio frequency interference at the fast frequency. The system clock may be intelligently controlled to select the slow frequency to reduce radio frequency interference to prioritize execution of a network application, or to select the fast frequency to increase processor speed and prioritize execution of a local application.

Abstract: The disclosure provides a limit device and a robot using the same. The limit device comprises a first connecting member, a transmission rod and a second connecting member. The first connecting member comprising a first main body portion and two first connecting elements. The two first connecting elements are arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod comprising a first end and a second end. The first end and the second end are arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member provided with two indexing buckles. The two indexing buckles are arranged at intervals, each of the indexing buckles comprises a first limiting groove and a second limiting groove.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: A smart battery device includes a battery unit, a temperature-sensing unit and a processing unit. The temperature-sensing unit senses the ambient temperature to generate a temperature signal. The processing unit is coupled to the battery unit and the temperature-sensing unit. In a charging mode, the processing unit receives the temperature signal and obtains the power capacity of the battery unit. The processing unit sets full capacity according to the temperature signal and generates an indication flag when the power capacity of the battery unit reaches the full capacity, wherein the indication flag is used to indicate that the battery unit is in a fully charged state.

Abstract: The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.