Abstract: In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a nanotube layer including a plurality of carbon nanotubes is formed, the nanotube layer is attached to a pellicle frame, and a solvent dipping treatment is performed to the nanotube layer by applying bubbles in a solvent to the nanotube layer.

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Abstract: Each Multi-domain Vertical Alignment (MVA) pixel structures on a display panel array includes at least two sub-pixels. By adjusting the channel W/L ratios of the transistors in the sub-pixels, the sub-pixels may have different display voltages so as to improve the display quality in a slant vision. A transistor is disposed between one of the sub-pixels and a common line (Vcs) as the dispersion path for remaining electric charges to improve the condition of burn-in.

Abstract: Each Multi-domain Vertical Alignment (MVA) pixel structures on a display panel array includes at least two sub-pixels. By adjusting the channel W/L ratios of the transistors in the sub-pixels, the sub-pixels may have different display voltages so as to improve the display quality in a slant vision. A transistor is disposed between one of the sub-pixels and a common line (Vcs) as the dispersion path for remaining electric charges to improve the condition of burn-in.

Abstract: A flat panel display is provided. The flat panel display includes a display panel, a gate driver, a source driver and a signal switching unit. The gate driver outputs a gate signal. The signal switching unit turns on the first terminal and the second terminal thereof to deliver the gate signal to a first scan line during a preceding half period of a frame period. Moreover, the signal switching unit turns on the first terminal and the third terminal thereof during a rear half period of the frame period, so that the gate signal, which is previously delivered to the first scan line, is delivered to the second scan line at this time. In this way, the source driver drives the display panel in coordination with the gate signal delivered by the first and second scan lines.

Abstract: A pixel structure includes a scan line, a data line, a first thin film transistor (TFT), a second TFT, a first pixel electrode, a second pixel electrode and a third pixel electrode. The first TFT and the second TFT respectively possessing a first drain electrode and a second drain electrode are electrically connected to the scan line and the data line. The first pixel electrode is electrically connected to the first drain electrode. The second pixel electrode is placed on and coupled to parts of the first drain electrode, and the third pixel electrode is placed on and coupled to parts of the second drain electrode. As a result, the pixel structure is capable of reducing display quality variations arisen from different viewing angles.