Abstract: A conveying apparatus with a lift mechanism includes a carrier, a holder, and a lift handle. The holder is pivoted to the carrier and swings between an operating angle and a maintenance angle. A first arm of the lift handle has an acting end, a resistance end, and a second pivot disposed between the acting end and the resistance end and pivoted to the holder. The first arm further has a protruding length protruding from the bottom side of the holder. When the first arm rotates around the second pivot, the resistance end protrudes the protruding length from the bottom side to rest against the carrier and the holder is lifted to the maintenance angle using the protruding length. Therefore, the storage devices in the holder, originally difficult to be maintained, can be lifted and maintained simply and quickly.

Abstract: The present invention relates to a method of forming a level silicon oxide layer on a semiconductor wafer. The semiconductor wafer comprises a substrate having a first region containing no silicon nitride on its surface and a second region which is higher than the first region and contains a silicon nitride layer on its surface. The method comprises performing a cleaning process on the semiconductor wafer with an alkaline solution to uniform the deposition rate over the surface of the first region; and performing a deposition process employing ozone as a reactive gas with a flow capacity of 80-200 g/L to form a silicon oxide layer above the first and second regions wherein the deposition rate of the silicon oxide layer on the first region is higher than that on the second region and the silicon oxide layer above the first region is leveled with that above the second region after a predetermined period of time.

Abstract: The present invention provides a method of depositing a silicon oxide layer on a semiconductor wafer. The semiconductor wafer comprises a plurality of transistors positioned on its surface. The method comprises performing a cleaning process on the semiconductor wafer by using an alkaline solution to make a more uniform deposition rate of the silicon oxide layer on the transistors and other areas over the surface of the semiconductor wafer, then performing a deposition process by employing ozone as a reactive gas to form a silicon oxide layer of even thickness and without voids.