Patents by Inventor Ting-Chia Ko
Ting-Chia Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11677046Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: August 2, 2022Date of Patent: June 13, 2023Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20220376143Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: August 2, 2022Publication date: November 24, 2022Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 11437547Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: November 23, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20210074890Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10847682Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: July 12, 2019Date of Patent: November 24, 2020Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20190334069Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: July 12, 2019Publication date: October 31, 2019Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10411177Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: June 26, 2018Date of Patent: September 10, 2019Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20180309038Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: June 26, 2018Publication date: October 25, 2018Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10038129Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: December 26, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20180138380Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: December 26, 2017Publication date: May 17, 2018Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 9893257Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.Type: GrantFiled: November 21, 2016Date of Patent: February 13, 2018Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20170069810Abstract: A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.Type: ApplicationFiled: November 21, 2016Publication date: March 9, 2017Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 9530948Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: February 22, 2016Date of Patent: December 27, 2016Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20160172557Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: February 22, 2016Publication date: June 16, 2016Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 9306124Abstract: A light-emitting device includes a semiconductor light emitting stack and an electrode on the semiconductor light emitting stack, wherein the electrode includes a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer, and a barrier layer inserted between the mirror layer and the bonding layer and covering the mirror layer to prevent the mirror layer from reacting with the bonding layer, wherein the barrier layer includes a first pair of different metals.Type: GrantFiled: May 17, 2012Date of Patent: April 5, 2016Assignee: EPISTAR CORPORATIONInventors: Ting-Chia Ko, De-Shan Kuo, Chien-Kai Chung, Tsun-Kai Ko
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Patent number: 9293656Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: April 1, 2013Date of Patent: March 22, 2016Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Patent number: 9269855Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.Type: GrantFiled: December 4, 2013Date of Patent: February 23, 2016Assignee: EPISTAR CORPORATIONInventors: Chien-Kai Chung, Ya Lan Yang, Ting-Chia Ko, Tsun-Kai Ko, Jung-Min Hwang, Schang-Jing Hon, De-Shan Kuo, Chien-Fu Shen, Ta-Cheng Hsu, Min-Hsun Hsieh
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Patent number: 9231024Abstract: A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively.Type: GrantFiled: September 23, 2011Date of Patent: January 5, 2016Assignee: EPISTAR CORPORATIONInventors: Ching-San Tao, Ting-Chia Ko, De-Shan Kuo, Tsun-Kai Ko
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Patent number: 9231164Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.Type: GrantFiled: April 12, 2013Date of Patent: January 5, 2016Assignee: EPISTAR CORPORATIONInventors: Ting-Chia Ko, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko
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Patent number: 9166105Abstract: A light-emitting device includes: a substrate; a first semiconductor layer disposed on the substrate and having a first surface; a rough structure formed in the first semiconductor layer, the rough structure comprising porous structures formed therein and a portion of the porous structures having openings exposed on the first surface of the first semiconductor layer; and an active layer formed on the first semiconductor layer.Type: GrantFiled: December 28, 2012Date of Patent: October 20, 2015Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chung-Hsiang Tu