Abstract: A system and method for electrostatic discharge protection. The system includes a plurality of transistors. The plurality of transistors includes a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. The plurality of source regions and the plurality of drain regions are located within an active area in a substrate, and the active area is adjacent to at least an isolation region in the substrate. Additionally, the system includes a polysilicon region. The polysilicon region is separated from the substrate by a dielectric layer, and the polysilicon region intersects each of the plurality of gate regions. At least a part of the polysilicon region is on the active area.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor including a first drain, a second transistor including a second drain, and a resistor including a first terminal and a second terminal. The first terminal is coupled to the first drain and the second drain. Additionally, the system includes a third transistor coupled to the second terminal and a protected system. The third transistor includes a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a third drain. The protected system includes a fourth transistor, and the fourth transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a fourth drain.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. A plurality of polysilicon regions are disposed in an proximity of at least one of the plurality of gate regions. The plurality of polysilicon regions are separated from the first substrate a plurality of dielectric layers.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor including a first drain, a second transistor including a second drain, and a resistor including a first terminal and a second terminal. The first terminal is coupled to the first drain and the second drain. Additionally, the system includes a third transistor coupled to the second terminal and a protected system. The third transistor includes a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a third drain. The protected system includes a fourth transistor, and the fourth transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a fourth drain.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. A plurality of polysilicon regions are disposed in an proximity of at least one of the plurality of gate regions.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. Each of the plurality of gate regions intersects a polysilicon region.

Abstract: A system and method for electrostatic discharge protection. The system includes a first transistor coupled to a first system and including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a first drain. The first system includes or is coupled to a core transistor, and the core transistor includes a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a second drain. The first transistor is selected from a plurality of transistors, and the plurality of transistors include a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. Each of the plurality of gate regions intersects a polysilicon region.