Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.

Abstract: Systems and methods for generating, distributing, and using performance mode BIOS configurations are disclosed. Each performance mode BIOS configuration can be a unique set of BIOS setting values that have been established to optimize a particular performance parameter or set of performance parameters, such as boot speed or operating system installation speed. Based on a given hardware configuration and/or set of performance parameters, one or more performance mode BIOS configurations can be packaged and transferred to a memory of a BMC in the form of one or more configuration payloads. The BIOS Setup Utility can display all configuration payloads, such as listed by the type of performance mode (e.g., “Boot Speed Performance Mode” and “OS Installation Performance Mode”), that are available in the BMC memory and allow a user to overwrite the memory containing the current BIOS configuration with a selected configuration payload.

Abstract: Provided are organic light emitting devices (OLED) comprising an anode; a cathode, and an organic layer between the anode and the cathode, the organic layer comprising a light-emitting dopant within a host material, the light-emitting dopant being an optically active Pt complex comprising a tetradentate ligand; wherein one enantiomer of the optically active Pt complex is present in an enantiomeric excess (ee) of at least 5%. Further provided are OLEDs comprising an anode, a cathode, and an organic layer between the anode and the cathode, the organic layer the organic layer comprising a light-emitting chiral dopant within a chiral host material, the light-emitting chiral dopant being an optically active complex; wherein one enantiomer of the optically active complex of the chiral dopant is present in an ee of at least 5%, and wherein one enantiomer of the chiral host material is present in an ee of at least 5%.

Abstract: The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.

Abstract: A method for fabricating functional staple fiber is disclosed. A non-woven fabric substrate is provided. A metal layer or a metal oxide layer is sputtered on the surface of the non-woven fabric to obtain a complex fabric. The complex fabric is carded and becomes a plurality of functional staple fibers. An apparatus for fabricating functional staple fiber is also disclosed.

Abstract: An apparatus for producing fibers includes a raw materials supplier, a coagulating agents supplier and at least one spray nozzle. The raw materials supplier is used for supplying raw materials. The coagulating agents supplier is used for supplying coagulating agents. The spray nozzle has an inner needle and an outer needle. The inner needle is connected to the raw materials supplier for spraying the raw materials. The outer needle is connected to the coagulating agents supplier and covers the inner needle for spraying the coagulating agents. The raw materials sprayed by the inner needle interact with the coagulating agents sprayed by the outer needle to form the fibers.