Patents by Inventor Ting-Chu Ko

Ting-Chu Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060118962
    Abstract: A method of forming an integrated circuit interconnect structure is presented. A first conductive line is formed over a semiconductor substrate. A conductive cap layer is formed on the first conductive line to improve device reliability. An etch stop layer (ESL) is formed on the conductive cap layer. An inter-level dielectric (IMD) is formed on the ESL. A via opening and a trench are formed in the ESL, IMD, and conductive cap layer. A recess is formed in the first conductive line. The recess can be formed by over etching when the first dielectric is etched, or by a separate process such as argon sputtering. A second conductive line is formed filling the trench, opening and recess.
    Type: Application
    Filed: December 3, 2004
    Publication date: June 8, 2006
    Inventors: Jui Huang, Minghsing Tsai, Shau-Lin Shue, Hung-Wen Su, Ting-Chu Ko
  • Publication number: 20060118422
    Abstract: A chemical solution for an electro chemical plating process includes an electro chemical plating solution; and an additive, added in the electro chemical plating solution, substantially consisting of a polymer with one or more kinds of impurities, wherein each kind of the impurities has a density, with respect to the polymer, lower then 1019 atoms/cc.
    Type: Application
    Filed: December 3, 2004
    Publication date: June 8, 2006
    Inventors: Ting-Chu Ko, Chien-Hsueh Shih, Minghsing Tsai
  • Patent number: 7026244
    Abstract: A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.
    Type: Grant
    Filed: August 8, 2003
    Date of Patent: April 11, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ting-Chu Ko, Ming-Hsing Tsai, Chien-Hsueh Shih
  • Publication number: 20050245072
    Abstract: A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle ? less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.
    Type: Application
    Filed: April 28, 2004
    Publication date: November 3, 2005
    Inventors: Hsien-Ming Lee, Jing-Cheng Lin, Shing-Chyang Pan, Ming-Hsing Tsai, Hung-Wen Su, Shih-Wei Chou, Shau-Lin Shue, Kuo-Wei Cheng, Ting-Chu Ko
  • Publication number: 20050045485
    Abstract: A method for reducing or avoiding copper layer pitting in a copper electrochemical deposition process to improve deposition uniformity including providing a substrate for carrying out at least a first copper electroplating process; providing a copper electroplating solution including a deforming (antiforming) agent wherein the antiforming (deforming) agent includes at least one alkylene monomer; and, carrying out at least a first copper electroplating process to deposit at least a first copper layer.
    Type: Application
    Filed: September 3, 2003
    Publication date: March 3, 2005
    Inventors: Chien-Hsueh Shih, Ting-Chu Ko, Minghsing Tsai
  • Publication number: 20050029659
    Abstract: A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.
    Type: Application
    Filed: August 8, 2003
    Publication date: February 10, 2005
    Inventors: Ting-Chu Ko, Ming-Hsing Tsai, Chien-Hsueh Shih