Abstract: Provided is a low-dose interferon composition for treatment or prevention of conditions, diseases or disorders associated with inflammation in cat. The composition comprises a total concentration of human interferon-?2b in a range of 160 IU/ml to 100,000 IU/ml. The composition is orally administered buccally.

Abstract: The present application provides a process for manufacturing an orally disintegrating tablet (ODT) comprising a cytokine as an active pharmaceutical ingredient comprising: acidifying an excipient, conducting a first granulation step of the acidified excipient to obtain acidic powders, and conducting a second granulation step by mixing the acidic powders and the cytokine to obtain granules containing the cytokine. The present application also provides an ODT manufactured by the process.

Abstract: A device for detecting or identifying diseases or disorders in a human subject by collecting biological sample from the human subject comprises a pump unit, a first unit, a second unit, a gas permeable filter, and a collector. The first unit comprises a first chamber and a gas sensor unit. The second unit comprises a second chamber, an outlet portion and an inlet portion. The gas permeable filter is disposed in an upstream region of the second chamber. The collector is disposed in a downstream region of the second chamber. The pump unit is configured, when activated, to create a negative pressure in a gas flow pathway provided between the first chamber and second chamber through the outlet portion, thereby allowing an ambient gas stream forcedly flows from an exterior through the inlet portion into the second chamber and the first chamber.

Abstract: A gas detection system for gynecological disease detection and a detection method using the same are provided. The gas detection system is configured to detect an analyte from a female vagina and includes a main body, a sleeve, a detector, a pump, and a controller. The main body includes a body portion and a head portion having an intake channel. The body portion includes a detection chamber and an exhaust channel. The detector includes at least one sensor configured to detect at least one target of the analyte and produce at least one detection signal. The pump is communicated with the detection chamber and the exhaust channel. The controller includes a processing unit and a first communication unit. The processing unit receives the at least one detection signal and controls the first communication unit to send the at least one detection signal.

Abstract: A method for fabricating a semiconductor device by using a plasma-enhanced atomic layer deposition apparatus. A substrate comprising a silicon substrate and a first oxide layer is provided. A plurality of stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form trenches. A second oxide layer is deposited by using a plasma-enhanced atomic layer deposition apparatus that includes a chamber, an upper electrode, a lower electrode, and a three-dimensional rotation device. The upper electrode is connected to a first radio-frequency power device. The upper electrode is configured to generate a plasma. The lower electrode is connected to a second radio-frequency power device. The three-dimensional rotation device drives the substrate to rotate. A high resistance layer is deposited on the second oxide layer. A low resistance layer is deposited on the high resistance layer.

Abstract: A method for manufacturing a semiconductor device using a plasma-enhanced atomic layer deposition is provided. A substrate comprising a silicon substrate and a first oxide layer is provided. Stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form at least one trench. A second oxide layer is deposited on the stacked structures and the trench using a plasma-enhanced atomic layer deposition apparatus includes a chamber, an upper electrode including nozzles, and a lower electrode. The upper electrode is connected to a first radio-frequency power device configured to generate plasma and a second radio-frequency power device configured to clean the nozzles. The lower electrode is connected to a third radio-frequency power device. A high resistance layer is deposited on the second oxide layer and a low resistance layer is deposited on the high resistance layer.

Abstract: A method for producing a porous structure electrode with gas permeability and liquid impermeability, includes the following steps: Step 1: mixing a catalytic material having hydrophilicity, a carbon nanotube material, a material with a hydrophilic group, and a carbon black material to form a first slurry, wherein the carbon nanotube material has a specific surface area equal to or greater than the carbon black material; Step 2: mixing the first slurry with an emulsified material to form a second slurry; Step 3: obtaining a film material through a film forming process; Step 4: heating the film material to a first temperature to remove solvent in the film material; Step 5: Repeating steps 3 to 4; and Step 6: heating the film material to a second temperature to remove liquid in the film material, thereby leaving pores in the film material, and allowing the film material to solidify.

Abstract: The present application provides a method for treating and/or preventing an infection of Coronavirus comprising: providing a therapeutically effective amount of a composition comprising interferon to a subject via sublingual administration and/or buccal administration; wherein the Coronavirus comprises SARS-CoV-2.

Abstract: The present invention provides a manufacturing method of an electrode. The method includes steps of: mixing a first catalyst with a first average particle size, a second catalyst with a second average particle size, a first conductive agent, a first adhesive, and a solvent to form a first mixture, wherein a weight ratio of the first catalyst to the second catalyst is 5:1 to 1:5; stirring the first mixture to obtain a second mixture; rolling the second mixture into a catalytic layer; and pressing the catalytic layer with a conductive current collector and a gas diffusion film to obtain the electrode.

Abstract: A method for manufacturing a three-dimensional semiconductor diode device comprises providing a substrate comprising a silicon substrate and a first oxide layer formed on the silicon substrate; depositing a plurality of stacked structures on the substrate, each of the stacked structures comprising a dielectric layer and a conductive layer; etching the stacked structures through a photoresist layer which is patterned to form at least one trench in the stacked structures, a bottom of the trench exposing the first oxide layer; depositing a second oxide layer on the stacked structures and the trench; depositing a high-resistance layer on the second oxide layer, the high-resistance layer comprising a first polycrystalline silicon layer and a first conductive compound layer; and depositing a low-resistance layer on the high-resistance layer, the low-resistance layer comprising a second polycrystalline silicon layer and a second conductive compound layer.

Abstract: A device for obtaining a newly generated oxygen from an atmospheric environment is disclosed. The device includes a container having an inlet and an outlet, a cathode accommodated in the container and being in contact with an environmental oxygen in the atmospheric environment, an anode accommodated in the container and disposed at a position opposite to the cathode, an electrolyte accommodated in the container and immersing therein the cathode and the anode, a moisture removal unit disposed at the outlet having an outlet position, and a gas permeable element disposed at the outlet, wherein the cathode is disposed at the inlet, and the gas permeable element is disposed at a position closer to the outlet position than the moisture removal unit.

Abstract: A sensor with a chamber comprises a base, a cavity body, a sensing element, and a porous gel material. The cavity body is disposed on the base and has a cavity wall and an inner space formed inside the cavity wall, the sensing element is disposed on the cavity wall, and the porous gel material is disposed between the base and the cavity body, the porous gel material has a porosity of not less than 80%, so that gas is capable of communicating between the inner space of the cavity body and an outside, thereby forming a passage for gas to enter and exit to balance a pressure in the sensor with the chamber, increase a support of the sensor with the chamber, and reduce the risk of conventional bonding between the sensing element and the base using die-bonding adhesive.

Abstract: A gas detection system for gynecological disease detection and a detection method using the same are provided. The gas detection system is configured to detect an analyte from a female vagina and includes: a main body, a sleeve, a detection module, a pump, and a control module. The main body includes a body portion and a head portion having an intake channel. The body portion includes a detection chamber and an exhaust channel. The detection module includes at least one sensor configured to detect at least one target of the analyte and produce at least one detection signal. The pump is communicated with the detection chamber and the exhaust channel. The control module includes a processing unit and a first communication unit. The processing unit receives the at least one detection signal and controls the first communication unit to send the at least one detection signal.

Abstract: The invention provides a system for evaluating food flavors based on a gas, including a multi-gas sensing module and an odor information processing module. The sensing module includes a colorimetric gas sensing chip for reacting with odor molecules emitted by the food to be evaluated to form a coloring reaction, and the sensing module generates a color image respectively corresponding to coloring reaction according to the coloring reaction. The processing module is communicatively connected with the sensing module and includes an image acquisition unit for converting the color image into an odor information, a database unit including a plurality of identification information, and an arithmetic unit perform a calculation to form a result for evaluating the food flavors based on the plurality of identification information and the color image. The user can judge the actual condition of foods according to the result for evaluating the food flavors.

Abstract: A method for fabricating a semiconductor device by using a plasma-enhanced atomic layer deposition apparatus. A substrate comprising a silicon substrate and a first oxide layer is provided. A plurality of stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form trenches. A second oxide layer is deposited by using a plasma-enhanced atomic layer deposition apparatus that includes a chamber, an upper electrode, a lower electrode, and a three-dimensional rotation device. The upper electrode is connected to a first radio-frequency power device. The upper electrode is configured to generate a plasma. The lower electrode is connected to a second radio-frequency power device. The three-dimensional rotation device drives the substrate to rotate. A high resistance layer is deposited on the second oxide layer. A low resistance layer is deposited on the high resistance layer.

Abstract: A method for manufacturing a three-dimensional semiconductor diode device comprises providing a substrate comprising a silicon substrate and a first oxide layer formed on the silicon substrate; depositing a plurality of stacked structures on the substrate, each of the stacked structures comprising a dielectric layer and a conductive layer; etching the stacked structures through a photoresist layer which is patterned to form at least one trench in the stacked structures, a bottom of the trench exposing the first oxide layer; depositing a second oxide layer on the stacked structures and the trench; depositing a high-resistance layer on the second oxide layer, the high-resistance layer comprising a first polycrystalline silicon layer and a first conductive compound layer; and depositing a low-resistance layer on the high-resistance layer, the low-resistance layer comprising a second polycrystalline silicon layer and a second conductive compound layer.

Abstract: A method for manufacturing a semiconductor device using a plasma-enhanced atomic layer deposition is provided. A substrate comprising a silicon substrate and a first oxide layer is provided. Stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form at least one trench. A second oxide layer is deposited on the stacked structures and the trench using a plasma-enhanced atomic layer deposition apparatus includes a chamber, an upper electrode including nozzles, and a lower electrode. The upper electrode is connected to a first radio-frequency power device configured to generate plasma and a second radio-frequency power device configured to clean the nozzles. The lower electrode is connected to a third radio-frequency power device. A high resistance layer is deposited on the second oxide layer and a low resistance layer is deposited on the high resistance layer.

Abstract: A method for manufacturing a film bulk acoustic resonance device is disclosed. The proposed method, wherein the device has a specific resonant frequency, includes: providing a substrate having a recess, wherein the recess has a height; configuring a first piezoelectric material layer on the substrate, and causing the recess to form an air gap; configuring a lower electrode on the first piezoelectric material layer; when the height is in a first range, causing a resonant frequency of the film bulk acoustic resonance device versus the height to have a first slope; when the height is in a second range, causing the resonant frequency versus the height to have a second slope; and causing the first slope to be smaller than the second slope.