Patents by Inventor Ting-Chun Liu
Ting-Chun Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240144568Abstract: Apparatuses, systems, and techniques are presented to generate digital content. In at least one embodiment, one or more neural networks are used to generate video information based at least in part upon voice information and a combination of image features and facial landmarks corresponding to one or more images of a person.Type: ApplicationFiled: September 6, 2022Publication date: May 2, 2024Inventors: Siddharth Gururani, Arun Mallya, Ting-Chun Wang, Jose Rafael Valle da Costa, Ming-Yu Liu
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Patent number: 11955026Abstract: A method, computer program product, and computer system for public speaking guidance is provided. A processor retrieves speaker data regarding a speech made by a user. A processor separates the speaker data into one or more speaker modalities. A processor extracts one or more speaker features from the speaker data for the one or more speaker modalities. A processor generates a performance classification based on the one or more speaker features. A processor sends to the user guidance regarding the speech based on the performance classification.Type: GrantFiled: September 26, 2019Date of Patent: April 9, 2024Assignee: International Business Machines CorporationInventors: Cheng-Fang Lin, Ching-Chun Liu, Ting-Chieh Yu, Yu-Siang Chen, Ryan Young
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Patent number: 11941841Abstract: A computer-implemented method according to one embodiment includes running an initial network on a plurality of images to detect actors pictured therein and body joints of the detected actors. The method further includes running fully-connected networks in parallel, one fully-connected network for each of the detected actors, to reconstruct complete three-dimensional poses of the actors. Sequential model fitting is performed on the plurality of images. The sequential model fitting is based on results of running the initial network and the fully-connected networks. The method further includes determining, based on the sequential model fitting, a locational position for a camera in which the camera has a view of a possible point of collision of two or more of the actors. The camera is instructed to be positioned in the locational position.Type: GrantFiled: September 22, 2021Date of Patent: March 26, 2024Assignee: International Business Machines CorporationInventors: Yu-Siang Chen, Ching-Chun Liu, Ryan Young, Ting-Chieh Yu
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Publication number: 20240095989Abstract: Apparatuses, systems, and techniques to generate a video using two or more images comprising objects to be included in the video. In at least one embodiment, objects are identified in two or more images using one or more neural networks, to generate a video to include the objects in the video.Type: ApplicationFiled: September 15, 2022Publication date: March 21, 2024Inventors: Arun Mohanray Mallya, Ting-Chun Wang, Ming-Yu Liu
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Patent number: 11934959Abstract: Apparatuses, systems, and techniques are presented to synthesize consistent images or video. In at least one embodiment, one or more neural networks are used to generate one or more second images based, at least in part, on one or more point cloud representations of one or more first images.Type: GrantFiled: June 1, 2020Date of Patent: March 19, 2024Assignee: NVIDIA CORPORATIONInventors: Arun Mallya, Ting-Chun Wang, Ming-Yu Liu, Karan Sapra
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Patent number: 8765329Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.Type: GrantFiled: November 5, 2010Date of Patent: July 1, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jeng-Shiun Ho, Luke Lo, Ting-Chun Liu, Min-Hung Cheng, Jing-Wei Shih, Wen-Han Chu, Cheng-Cheng Kuo, Hua-Tai Lin, Tsai-Sheng Gau, Ru-Gun Liu, Yu-Hsiang Lin, Shang-Yu Huang
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Publication number: 20120115073Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.Type: ApplicationFiled: November 5, 2010Publication date: May 10, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jeng-Shiun Ho, Luke Lo, Ting-Chun Liu, Min-Hung Cheng, Jing-Wei Shih, Wen-Han Chu, Cheng-Cheng Kuo, Hua-Tai Lin, Tsai-Sheng Gau, Ru-Gun Liu, Yu-Hsiang Lin, Shang-Yu Huang
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Patent number: 6573024Abstract: The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E0 value of the resist can be decreased.Type: GrantFiled: March 9, 2001Date of Patent: June 3, 2003Assignees: Industrial Technology Research Institute, Everlight Chemical Industrial CorporationInventors: Sheng-Yueh Chang, Jian-Hong Chen, Ting-Chun Liu, Tzu-Yu Lin, Wen-Yuang Tsai
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Publication number: 20020086234Abstract: The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E0 value of the resist can be decreased.Type: ApplicationFiled: March 9, 2001Publication date: July 4, 2002Inventors: Sheng-Yueh Chang, Jiam-Hong Chen, Ting-Chun Liu, Tzu-Yu Lin, Wen-Yuang Tsai
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Patent number: 6380339Abstract: The present invention relates to a silicon-containing vinyl copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit with an acid-labile group, and a vinyl repeating unit with a silicon-containing group. The silicon-containing vinyl copolymer is suitable for use as a top layer resist in a bilayer resist system.Type: GrantFiled: December 27, 2000Date of Patent: April 30, 2002Assignee: Industrial Technology Research InstituteInventors: Mao-Ching Fang, Ming-Chia Tai, Jui-Fa Chang, Ting-Chun Liu, Tzu-Yu Lin
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Publication number: 20020042485Abstract: The present invention relates to a silicon-containing vinyl copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit with an acid-labile group, and a vinyl repeating unit with a silicon-containing group. The silicon-containing vinyl copolymer is suitable for use as a top layer resist in a bilayer resist system.Type: ApplicationFiled: December 27, 2000Publication date: April 11, 2002Applicant: Industrial Technology Research InstituteInventors: Mao-Ching Fang, Ming-Chia Tai, Jui-Fa Chang, Ting-Chun Liu, Tzu-Yu Lin
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Patent number: 6303725Abstract: The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur, —CH2—, and —SiH2—, wherein each R1 is independently selected from C1-20 alkyl and phenyl.Type: GrantFiled: September 29, 2000Date of Patent: October 16, 2001Assignees: Industrial Technology Research Institute, Everlight Chemical Industrial CorporationInventors: Sheng-Yueh Chang, Bang-Chein Ho, Jian-Hong Chen, Ting-Chun Liu, Tzu-Yu Lin
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Patent number: 6197476Abstract: The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur, wherein each R1 is independently selected from C1-20 alkyl and phenyl.Type: GrantFiled: December 17, 1998Date of Patent: March 6, 2001Assignee: Industrial Technology Research Institute Everlight Chemical Industrial CorporationInventors: Sheng-Yueh Chang, Bang-Chein Ho, Jian-Hong Chen, Ting-Chun Liu, Tzu-Yu Lin