Abstract: In some embodiments, a flip-flop is disposed as an integrated circuit layout on a flip-flop region of a semiconductor substrate. The flip-flop includes a first clock inverter circuit that resides within the flip-flop region, and a second clock inverter circuit residing within the flip-flop region. The first clock inverter circuit and the second clock inverter circuit are disposed on a first line. Master switch circuitry is made up of a first plurality of devices which are circumscribed by a master switch perimeter that resides within the flip-flop region of the integrated circuit layout. The master switch circuitry and the first clock inverter circuit are disposed on a second line perpendicular to the first line. Slave switch circuitry is operably coupled to an output of the master switch circuitry. The slave switch circuitry is made up of a third plurality of devices that are circumscribed by a slave switch perimeter.

Abstract: A method for fabricating a memory device includes: providing a substrate; forming a first dielectric layer over the substrate; forming a plurality of conductive layers and a plurality of dielectric layers alternately and horizontally disposed on the substrate; forming a channel column structure on the substrate and in the plurality of conductive layers and the plurality of dielectric layers, where a side wall of the channel column structure is in contact with the plurality of conductive layers; forming a second dielectric layer covering the first dielectric layer; and forming, in the first and second dielectric layers, a conductive column structure adjacent to the channel column structure and in contact with one of the plurality of conductive layers, where the conductive column structure includes a liner insulating layer as a shell layer.

Abstract: A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.

Abstract: A photo element includes a photo thin film transistor (TFT), a switch thin film transistor, and a compensation thin film transistor. A bias line provides a bias voltage to the photo TFT. The photo TFT generates a photo-induced current under an illuminated environment. A first switch line provides a voltage to open the switch TFT, and thus the photo-induced current is read out through a readout line. A second switch line provides compensation current to open the compensation TFT. The compensation current applies a reverse-biased stress to the photo TFT; therefore the threshold voltage and sensitivity of the photo TFT can be maintained.

Abstract: A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.

Abstract: A photo element includes a photo thin film transistor (TFT), a switch thin film transistor, and a compensation thin film transistor. A bias line provides a bias voltage to the photo TFT. The photo TFT generates a photo-induced current under an illuminated environment. A first switch line provides a voltage to open the switch TFT, and thus the photo-induced current is read out through a readout line. A second switch line provides compensation current to open the compensation TFT. The compensation current applies a reverse-biased stress to the photo TFT; therefore the threshold voltage and sensitivity of the photo TFT can be maintained.

Abstract: The present invention provides a process for preparing a polyhydroxystyrene derivative, comprising adding polyhydroxystyrene to an alkaline alcohol solution to form a homogeneous polyhydroxystyrene solution; and reacting the polyhydroxystyrene solution with an ester to obtain the polyhydroxystyrene derivative. The obtained polyhydroxystyrene derivative is suitable for use as the resin component of a photoresist.