Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.

Abstract: In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: Systems and methods for providing a combined mosquito staging and dissection system are disclosed. The system can include a mosquito staging subsystem; a robotic pick-and-place station; and a dissection, extrusion, collection, and disposal subsystem. The subsystems can include one or more stations to provide orientation, decapitation, extrusion of salivary glands, and disposal of carcasses of the mosquitoes. The resident live sporozoites from the salivary glands can be used to produce Plasmodium SPZ-based vaccines.

Abstract: Systems and methods for providing a combined mosquito staging and dissection system are disclosed. The system can include a mosquito staging subsystem; a robotic pick-and-place station; and a dissection, extrusion, collection, and disposal subsystem. The subsystems can include one or more stations to provide orientation, decapitation, extrusion of salivary glands, and disposal of carcasses of the mosquitoes. The resident live sporozoites from the salivary glands can be used to produce Plasmodium SPZ-based vaccines.