Patents by Inventor Ting-En SHIE

Ting-En SHIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 8735904
    Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: May 27, 2014
    Assignee: National Chiao Tung University
    Inventors: Yi Chang, Chia-Hua Chang, Yueh-Chin Lin, Yu-Kong Chen, Ting-En Shie
  • Semiconductor Device
    Publication number: 20120313107
    Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
    Type: Application
    Filed: February 8, 2012
    Publication date: December 13, 2012
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Yi CHANG, Chia-Hua CHANG, Yueh-Chin LIN, Yu-Kong CHEN, Ting-En SHIE