Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A full-voltage AC LED module includes a circuit substrate having a first bridge rectifier circuit comprising a set of first load nodes and a set of first power nodes and a second bridge rectifier circuit comprising a set of second load nodes and a set of second power nodes, and a LED module packaged in the circuit substrate and having a first light-emitting device formed of a series of light-emitting diodes and electrically connected to the set of first load nodes and a second light-emitting device formed of a series of light-emitting diodes and electrically connected to the set of second load nodes. By means of connecting the set of first power nodes and the set of second power nodes in series or in parallel, the required input voltage for starting up the LED module is relatively changed.