Abstract: A method of fabricating a memory device at least includes the following steps. A first stack structure is formed above a substrate. The first stack structure includes a plurality of first insulating layers and a plurality of first conductive layers alternately stacked. A top layer of the first stack structure includes a plurality of anti-oxidation atoms therein. A second stack structure is formed on the first stack structure. The second stack structure includes a plurality of second insulating layers and a plurality of middle layers alternately stacked. A slit trench is formed to extend from the second stack structure to a top first conductor layer of the plurality of first conductor layers. A protective layer is formed on a sidewall of the top first conductive layer exposed by the slit trench. The memory device may be a 3D NAND flash memory with high capacity and high performance.

Abstract: A memory device includes, from bottom to top, a substrate, a laminated layer and a stacked structure. Vertical channel pillars penetrate through the stacked structure and the laminated layer. First isolation structures are disposed aside the vertical channel pillars and penetrate through a lower part of the stacked structure. Second isolation structures are disposed over the first isolation structures and penetrate through an upper part of the stacked structure. Common source lines are disposed aside the vertical channel pillars and penetrate through the stacked structure and part of the laminated layer. From a top view, the common source lines extend in a first direction. Each of the first and second isolation structures has, in the first direction, two wide end portions respectively adjacent to two common source lines. The memory device may be applied in the process of manufacturing a 3D NAND flash memory with high capacity and high performance.

Abstract: The semiconductor device includes a substrate, a stack disposed on the substrate, a first common source line and a second common source line disposed in the stack and connected to the substrate. The stack includes insulating layers and conductive layers alternately arranged. The first common source line and the second common source line are extended along a first direction and are arranged in a second direction that is perpendicular to the first direction. The first common source line includes a first segment and a second segment spaced apart by a first common source line cut. The second common source line includes a third segment and a fourth segment spaced apart by a second common source line cut. The first common source line cut is shifted relative to the second common source line cut in the first direction. A method of forming the semiconductor device is also disclosed.

Abstract: Systems and methods for infection treatment evaluation is provided. The system receives patient encounter records including patient attribute data and patient LoS data. The system generates, via an LoS estimation model, LoS estimations based on the patient attribute data of each of the patient encounter records. The patient attribute data includes vital sign data, patient demographic data, laboratory data, medical condition data, infection type data, medication administration data, and/or discharge type. The system further generates, via a metric analyzer, evaluation metrics based on the LoS estimations and the patient LoS data of each of the patient encounter records. The system may also include a user interface configured to display at least a portion of the one or more evaluation metrics. The system may also train the LoS estimation model with a historical encounter records. Each of the historical encounter records includes historical attribute data and historical recovery data.

Abstract: A memory includes a plurality of e-fuse sets, a sensing circuit, an Error-Correcting Code (ECC) circuit, and a plurality of registers. Each e-fuse set includes a plurality of e-fuses, and each e-fuse of the plurality of e-fuses corresponds to a first blown result. The sensing circuit senses the plurality of e-fuses to output a plurality of first blown results. The ECC circuit receives the plurality of first blown results and corrects a first blown result if the first blown result includes an error or directly outputs the first blown result if the first blown result comprises no error to generate a second blown result. The plurality of registers receive a plurality of second blown results. The plurality of second blown results adjusts predetermined settings of the memory, and a number of the plurality of registers is less than a number of the plurality of e-fuses.

Abstract: A semiconductor structure is provided. The semiconductor structure has a device region and a periphery region adjacent to the device region. The periphery region comprises an array contact defining region and a periphery contact defining region. The semiconductor structure comprises a substrate, a staircase structure, an etch stop layer, a plurality of array contacts, and a plurality of periphery contacts. The staircase structure is disposed on the substrate in the periphery region. The staircase structure comprises conductive layers and dielectric layers disposed alternately. The etch stop layer is disposed on the staircase structure in the array contact defining region. The array contacts are disposed on the staircase structure and through the etch stop layer in the array contact defining region. The periphery contacts are through the staircase structure in the periphery contact defining region.

Abstract: A method for fabricating a memory device includes: providing a substrate; forming a first dielectric layer over the substrate; forming a plurality of conductive layers and a plurality of dielectric layers alternately and horizontally disposed on the substrate; forming a channel column structure on the substrate and in the plurality of conductive layers and the plurality of dielectric layers, where a side wall of the channel column structure is in contact with the plurality of conductive layers; forming a second dielectric layer covering the first dielectric layer; and forming, in the first and second dielectric layers, a conductive column structure adjacent to the channel column structure and in contact with one of the plurality of conductive layers, where the conductive column structure includes a liner insulating layer as a shell layer.

Abstract: An electrical connector includes an insulating housing, a plurality of first terminals, a plurality of second terminals, a metal element and a fastening assembly. The insulating housing has a first insulating body, a second insulating body surrounding the first insulating body, a third insulating body and a fourth insulating body. The third insulating body is disposed to a rear end of a top surface of the first insulating body. The fourth insulating body is disposed to a top surface of the third insulating body. The plurality of the first terminals are surrounded by the first insulating body and the second insulating body. The plurality of the second terminals are surrounded by the third insulating body. The metal element is disposed to an outer surface of the insulating housing. The fastening assembly is positioned above the fourth insulating body.

Abstract: A semiconductor device includes a ground layer including a lower semiconductor material layer, a refilled semiconductor material layer disposed on the lower semiconductor material layer, and an upper conductive layer disposed on the refilled semiconductor material layer; a stacked structure disposed on the ground layer, including insulating layers and conductive layers alternately stacked along a first direction; and a conductive pillar penetrating the stacked structure and extending into the ground layer. The conductive pillar includes a bottom body portion corresponding to the ground layer, a middle body portion corresponding to middle and bottom portions of the stacked structure, and a plug. In a second direction, a first dimension in a portion of the bottom body portion overlapping the upper conductive layer is greater than a second dimension in a portion of the middle body portion overlapping a bottommost insulating layer of the stacked structure.

Abstract: The present disclosure is directed to systems and methods for developing an individual-specific patient baseline for a target patient. An exemplary method involves: determining one or more acuity scores for the target patient; identifying patient health data corresponding to one or more low acuity time periods; storing retrospective clinical data from a group of patients in a second database; comparing the patient health data corresponding to the one or more low acuity time periods with retrospective clinical data from a group of patients by identifying one or more patient subgroups; determining the individual-specific patient baseline using an adaptive baseline selection algorithm, wherein the adaptive baseline selection algorithm is used to determine whether to determine the individual-specific patient baseline using patient health data or using retrospective clinical data from one or more patient subgroups; and displaying, using a user interface, the individual-specific patient baseline.

Abstract: Methods, systems and apparatus for memory devices with multiple string select line (SSL) cuts are provided. In one aspect, a semiconductor device includes: a three-dimensional (3D) array of memory cells and a plurality of common source lines (CSLs) configured to separate the 3D array of memory cells into a plurality of portions. Each portion of the plurality of portions is between two adjacent CSLs and includes a plurality of conductive layers separated from each other by insulating layers and a plurality of vertical channels arranged orthogonally through the plurality of conductive layers and the insulating layers, each of the plurality of vertical channels including a string of memory cells. A top part of each portion of one or more portions includes at least two SSL cuts configured to separate the portion into multiple independent units, and each of the independent units is selectable by a corresponding SSL of multiple SSLs.

Abstract: Disclosed are a battery cell self-discharge current detection method, apparatus, and device, and a computer storage medium. The method includes: controlling a constant voltage source to start charging a battery cell at a first moment, and acquiring a first rate of change of a target current over time in a first preset duration after the first moment; controlling, in the case where the first rate of change is greater than a first threshold value, a constant current source and the constant voltage source to charge the battery cell; acquiring, in the case of reaching a second moment, a second rate of change of the target current over time in a second preset duration after the second moment, wherein the second moment is a moment when the time for charging the battery cell using the constant current source and the constant voltage source reaches a third preset duration; and determining.

Abstract: Disclosed are a battery cell self-discharge current detection method, apparatus, and device, and a computer storage medium. The method includes: controlling a constant voltage source to start charging a battery cell at a first moment, and acquiring a first rate of change of a target current over time in a first preset duration after the first moment; controlling, in the case where the first rate of change is greater than a first threshold value, a constant current source and the constant voltage source to charge the battery cell; acquiring, in the case of reaching a second moment, a second rate of change of the target current over time in a second preset duration after the second moment, wherein the second moment is a moment when the time for charging the battery cell using the constant current source and the constant voltage source reaches a third preset duration; and determining.

Abstract: A purification device includes a tubular shell having an inner surface and an electric heating member housed in the tubular shell. The heating member comprises a heating element made of an electrically conductive material which is permeable to exhaust gases. The device also includes an attachment of the heating element directly on the inner surface.

Abstract: A battery detection method and apparatus are provided. The battery detection apparatus includes: a voltage measurement module, configured to connect to a battery to be tested, and measure an open-circuit voltage of the battery to be tested; a processor, configured to obtain the open-circuit voltage; a constant voltage source, configured to input a test voltage to the battery to be tested under control of the processor after the battery to be tested stands for a preset time, the test voltage is the same as the open-circuit voltage; and a current measurement module, configured to measure an instantaneous current of the battery to be tested after the test voltage is inputted. The processor is also configured to obtain the instantaneous current and determine the self-discharge characteristic of the battery to be tested according to the instantaneous current and a preset current threshold.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a stack, active structures connecting structures and isolation layers. The stack is disposed on the substrate. The active structures penetrate through the stack in sub-array regions thereof. A plurality of memory cells are defined by cross points of gate electrodes in the stack and the active structures. The connecting structures penetrate through the stack between the sub-array regions. Each connecting structure includes a first portion, a second portion and a third portion. The first portion is formed as an outermost layer of the connecting structure and formed of polysilicon. The second portion is disposed in a space defined by the first portion and formed of amorphous silicon. The third portion is disposed on the second portion and formed of amorphous silicon. The isolation layers are disposed between sidewalls of the stack and the connecting structures.

Abstract: An exhaust gas heating device includes a housing and a heating element arranged in the housing for heating exhaust gases flowing through the housing. The heating element comprises a first and a second connecting region. A power source for supplying electricity to the heating element, comprises a first connecting element, connected to the first connecting region of the heating element, and intended to supply the heating element (18) with electricity, and a second connecting element. The electrical power source comprises a third connecting element that comprises an electrical connector, electrically connecting the second connecting element to the second connecting region of the heating element.