Abstract: The present application discloses an anti-electromagnetic interference wafer structure in the wafer processing stage; the anti-electromagnetic interference wafer structure comprises a digital processing unit area with a digital processing unit, an insulating layer, a conducting layer and a plurality of information connectivity points wherein the digital processing unit has a top surface on which the insulating layer and the information connectivity points are designed, the insulating layer has a top surface on which the conducting layer is coated, and the conducting layer is capable of absorbing electromagnetic interferences passed on to the conducting layer.

Abstract: A chip package unit, a chip package stack module, and a method of manufacturing the chip package stack module are provided. The chip package stack module includes upper and lower chip package units stacked vertically. The chip package unit includes a plurality of conductive pillars each of which has an upper pad and a lower pad respectively on upper and lower ends of the conductive pillar. The upper and lower chip package units are stacked by the lower pads of the upper chip package unit and the upper pads of the lower chip package unit electrically connected with each other. The conductive pillars of the upper chip package unit are electrically connected with the conductive pillars of the lower chip package unit correspondingly so that a memory chip of the upper chip package unit and a memory chip of the lower chip package unit are electrically connected.

Abstract: A wafer package for protection of an aluminum die pad of a die from damages during probe testing process is provided. Before performing the probe testing process on a plurality of dies of the wafer package, at least one bump is disposed on a surface of the aluminum die pad of the die of the wafer package by electroless plating. The bump is a metal stack structure having a certain thickness and composed of a nickel layer and a gold layer stacked over the aluminum die pad in turn, or a nickel layer, a palladium layer, and a gold layer stacked over the aluminum die pad in turn. Thus structural strength of the aluminum die pad of the die is increased to prevent damages during the probe testing process. Therefore, quality and reliability of the dies in following operations such as wire bonding are increased.

Abstract: A chip package unit with an outer protective layer and a method of manufacturing the same are provided. The chip package unit includes a rectangular die and at least one outer protective layer. The rectangular die has four sides. The outer protective layer is disposed on a surface of the rectangular die and having four sides. The chip package unit is divided from a wafer by a sawing process along cutting channels disposed on the wafer. The outer protective layer is formed on a surface of the wafer and covering the cutting channels completely. A cutting tool is firstly cutting the outer protective layer on the wafer and then moved downward continuously to cut the respective cutting channels. Thus the sides of the outer protective layer are flush with the sides of the rectangular die to avoid damages of the sides of the rectangular die during the sawing process.

Abstract: An embedded dual in-line memory module (DIMM) is provided. The memory module includes a printed circuit board (PCB), a first memory chip set, and a second memory chip set. A plurality of memory chips of the first memory chip set is arranged and electrically connected to a first circuit layer of the PCB by flip chip. A plurality of memory chips of the second memory chip set is arranged and electrically connected to a second circuit layer of the PCB by flip chip. The respective chips are directly disposed on the PCB by flip chip. Thereby the memory module has a condition that there is no metal wire for electrical connection generated by wire bonding. This helps cost reduction at manufacturing end and improves electrical performance.

Abstract: A chip package with heat dissipation and electromagnetic protection is provided. The chip package includes a package unit and a heat dissipation shielding layer. A top portion of the package unit is formed by grinding of an original top of the package unit using grinding technique and a level of a back surface of at least one die is at the same level with the top portion of the package unit after the grinding. The heat dissipation shielding layer is completely covering the top portion of the package unit for providing functions of heat dissipation and electromagnetic protection to the package unit.

Abstract: A chip package with a metal shielding layer and a method of manufacturing the same are provided. The chip package includes a chip, a redistribution layer (RDL), and a metal shielding layer. The chip is composed of a first surface and a second surface and cut from a wafer. The RDL is disposed on a surface of at least one chip protective layer of the chip and provided with at least one conductive circuit for electrical connection with the die pad of the chip. The conductive circuit includes at least one pad which is exposed on a surface of the RDL for electrical connection with the outside. The metal shielding layer is covering the second surface of the chip not only for protecting the chip and the conductive circuit from external electromagnetic interference or light interference but also for increasing structural strength of the chip package.

Abstract: A chip package with electromagnetic interference (EMI) shielding layer and a method of manufacturing the same are provided. The chip package includes a chip, a redistribution layer (RDL), an insulating layer, and an electromagnetic interference (EMI) shielding layer. A peripheral wall is formed around at least one first opening of the insulating layer for enclosing the first opening and a flat portion is disposed around the peripheral wall while a level of the flat portion is lower than a level of the peripheral wall. The flat portion of the insulating layer is covered with the EMI shielding layer which is isolated and electrically insulated from a pad in the first opening by the peripheral wall of the insulating layer. Thereby problems of the chip including fast increase in temperature and electromagnetic interference can be solved effectively.

Abstract: A chip package which includes a glass fiber substrate made of FR-4 fiberglass is provided. The chip package further includes a substrate pad which is a stacked metal structure with a certain thickness and composed of a nickel layer, a palladium layer, and a gold layer, or a nickel layer and a gold layer stacked over at least one first circuit layer in turn. A total thickness of the substrate pad is 3.15-5.4 ?m. The glass fiber substrate and the substrate pad can bear positive pressure generated during wire bonding. Thereby at least one solder joint is formed on the substrate pad precisely and integrally. This helps reduction in material cost for manufacturers.

Abstract: A chip package having die pads with protective layers is provided. At least one protective layer is covering and arranged at a peripheral zone of at least one die pad for minimizing area of the die pad exposed outside as well as shielding and protecting the peripheral zone of the die pad. A weld zone of the die pad is not covered by the protective layer so that the weld zone of the die pad is exposed. In a crossed-over state, one of bonding wires crossing one of the die pads with a corresponding connection pad of a carrier plate will not get across a second upper space defined by the weld zone of the rest of the die pads. Thereby the one of the bonding wires can be more isolated by the protective layers on the peripheral zones of the rest of the die pads.

Abstract: A chip package with at least one electromagnetic interference (EMI) shielding layer and at least one ground wire and a method of manufacturing the same are provided. The chip package includes a chip package unit, at least one EMI shielding layer, and at least one ground wire. The ground wire which consists of a first end and a second end opposite to the first end is inserted through the EMI shielding layer and a first insulating layer of the chip package unit. The first end is electrically connected with the EMI shielding layer while the second end of the ground wire is electrically connected with at least one grounding end of at least one first circuit layer of the chip package unit for protection against static electricity. Thereby malfunction of an electronic system with semiconductor chips due to static electricity can be avoided.

Abstract: A chip package having four sides provided with electromagnetic interference (EMI) shielding layers correspondingly and a method of manufacturing the same are provided. The four EMI shielding layers are made of metals, located on four lateral sides of the chip package, and completely covering four lateral sides of a substrate and four lateral sides of an insulating layer to prevent at least one first circuit layer, at least one second circuit layer, and at least one chip from electromagnetic interference. Moreover, the EMI shielding layers help to improve heat dissipation efficiency of the first circuit layer, the second circuit layer, and the chip.

Abstract: A chip package with an electromagnetic interference shielding layer and a method of manufacturing the same are provided. The chip package includes a substrate, at least one first circuit layer, at least one second circuit layer, at least one chip, a first insulating layer, and at least one electromagnetic interference shielding layer. The electromagnetic interference shielding layer is made of metals and covering a first surface of the first insulating layer completely for preventing the respective first circuit layers, the respective second circuit layers, and the respective chips from external electromagnetic interference (EMI).

Abstract: A chip package unit, a method of manufacturing the same, and package structure formed by stacking the same are provided. At least one first connecting pad, at least one second connecting pad, and at least one third connecting pad of a flexible printed circuit (FPC) board in the chip package unit are electrically connected with one another by circuit of the FPC board. At least one die pad disposed on a front surface of a chip is electrically connected with the first connecting pad first and then electrically connected with the outside by the second connecting pad or the third connecting pad. Thereby the chip of the chip package unit can be electrically connected with the outside by the front surface or a back surface thereof. Therefore, not only production is reduced due to simplified production process and energy saved, volume of the package structure is also reduced.

Abstract: A chip package unit, a method of manufacturing the same, and a package structure formed by stacking the same are provided. The chip package unit is formed by cutting of a wafer separately. The chip package unit includes a chip, a first redistribution layer (RDL), a second RDL, and at least one first circuit layer. The first circuit layer is electrically connected with and disposed between a first conductive circuit and a second conductive circuit. The first circuit layer is located at least one first lateral side of the chip, at least one second lateral side of the first RDL, and at least one third lateral side of the second RDL. The chip can be electrically connected with the outside by the first conductive circuit or the second conductive circuit. Thereby manufacturing process is simplified and manufacturing cost is further reduced.

Abstract: The present application discloses a thinning system in package featuring an encapsulation structure in which no printed circuit board exists and comprising: a plurality of dies mounted on a top face of a copper holder and electrically connected to the plurality of data pins on the copper holder; a passive element mounted on the top face and electrically connected to the dies wherein the dies are electrically connected to the ground pin of the copper holder and both the dies and the passive element are fixed on the top face of the copper holder through a layer of insulation adhesives; a molding compound encasing the dies and the passive element on the top face of the copper holder.

Abstract: A multi-layer stacked chip package is provided. A first substrate, a first circuit layer, a first chip, and a first insulation layer form a lower layer chip package while a second substrate, a second circuit layer, a second chip, and a second insulation layer form an upper layer chip package. The upper layer chip package is stacked over the lower layer chip package so that the multi-layer stacked chip package is formed by such stacking mode. One of the at least two chips is used to operate the rest chips or computing functions of the respective chips are combined to increase overall computing performance.

Abstract: A chip package which includes a chip, at least one first dielectric layer, at least one second dielectric layer, at least one conductive circuit, and at least one third dielectric layer is provide. The conductive circuit is formed by highly concentrated silver paste or copper paste filled in at least one first groove of the first dielectric layer and at least one second groove of the second dielectric layer while at least one die pad of the chip is electrically connected with the conductive circuit for improving electrical conduction efficiency of the conductive circuit. Moreover, at least one die-pad bump is formed in the first groove, arranged at and electrically connected with a surface of the die pad for protecting of the die pad.

Abstract: A chip package and a method of manufacturing the same are provided. The chip package includes at least one insulating protective layer disposed on a periphery of a surface of a seed layer correspondingly. A plurality of insulating protective layers is arranged at the seed layer of a plurality of rectangular chips of a wafer and located corresponding to a plurality of dicing streets. Thereby cutting tools only cut the insulating protective layer, without cutting a thick metal layer during cutting process. The insulating protective layer is formed on a periphery of the thick metal layer of the chip package after the cutting process.

Abstract: A bump of a chip package with higher bearing capacity in wire bonding is provided. The at least one bump of the chip package is a metal stacked member with a certain thickness. An overall thickness of the bump is 4.5-20 ?m. Thereby a structural strength of the bump is improved and thus able to bear positive pressure generated in wire bonding or formation of a first bonding point. Thus at least one internal circuit of a chip will not be damaged by the positive pressure and allowed to pass through an area under at least one die pad or arrange under the die pad of the chip. Thereby increased cost problem caused by internal circuit redesign of the chip can be solved and this helps to reduce cost at manufacturing end.