Abstract: An interconnect structure, along with methods of forming such, are described. The structure includes a dielectric layer, a conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer, wherein the conductive layer includes a first portion and a second portion adjacent the first portion. The structure also includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a dielectric material disposed between and in contact with the first and second barrier layers, wherein a bottom surface of the second barrier layer and a bottom surface of the dielectric material are substantially co-planar.

Abstract: The present application is directed to a cleavable polymer comprising one or more repeat units containing monomer A and one or more repeat units containing monomer B, wherein repeat unit containing monomer A and repeat unit containing monomer B are as described herein and to a process of preparing such a cleavable polymer. The present application is also directed to a cleavable polymer comprising one or more repeat units containing monomer C and one or more repeat units containing monomer D, wherein repeat unit containing monomer C and repeat unit containing monomer D are as described herein.

Abstract: The present application is directed to a polymer comprising a moiety of formula: wherein X, Y, i, j, s, and k are as described herein and salts thereof and to a process of preparing such a polymer.