Patents by Inventor Ting-Hao Chang
Ting-Hao Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968817Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.Type: GrantFiled: February 28, 2022Date of Patent: April 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Lin Chen, Chao-Yuan Chang, Ping-Wei Wang, Fu-Kai Yang, Ting Fang, I-Wen Wu, Shih-Hao Lin
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Patent number: 11942451Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.Type: GrantFiled: August 30, 2021Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mao-Yen Chang, Yu-Chia Lai, Cheng-Shiuan Wong, Ting Hao Kuo, Ching-Hua Hsieh, Hao-Yi Tsai, Kuo-Lung Pan, Hsiu-Jen Lin
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Publication number: 20240088182Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Chien Yu, Ting-Cheng Chang, Wen-Hau Wu, Chih-Kung Chang
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Publication number: 20240074027Abstract: A capacitor capable of releasing reactive oxygen species and reactive nitrogen species after powering of claim 1 is composed of the dielectric material. A plurality of through holes are designed on the capacitor, the through holes being used as air gaps to supply plasma gas and blow a fan to increase the gas flow, and the voltage being connected to the two corresponding electrode edges of the capacitor so that the capacitor generating a heating temperature (lower than 200 degrees Celsius). Thereby, after the capacitor is perforated to form honeycomb shape and powered, the air surrounding the capacitor flowing through the capacitor is ionized to the oxygen ion and nitrogen ion via heating and charge-discharge, generates plasma at room temperature and atmospheric pressure and releases the reactive oxygen ions and reactive nitrogen ions healing and helpful for body healing.Type: ApplicationFiled: August 23, 2022Publication date: February 29, 2024Inventors: Chung-Tai Chang, Chia-Hao Chang, Ting-Yi Chang
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Publication number: 20230402330Abstract: A method of manufacturing a semiconductor wafer is disclosed. The method includes exposing the semiconductor wafer to one or more dopant species to form one or more first implant layers on the semiconductor wafer, testing one or more geometric parameter values of the formed one or more first implant layers, after testing the one or more geometric parameter values, conditionally exposing the semiconductor wafer to one or more dopant species to form one or more additional implant layers on the semiconductor wafer, after forming the one or more additional implant layers, conditionally forming one or more additional circuit layers on the semiconductor wafer to form a plurality of functional electronic circuits on the semiconductor wafer, and conditionally testing the semiconductor wafer with a wafer acceptance test (WAT) operation.Type: ApplicationFiled: August 7, 2023Publication date: December 14, 2023Inventors: Feng-Chien Hsieh, Kuo-Cheng Lee, Yun-Wei Cheng, Chun-Hao Lin, Ting-Hao Chang
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Publication number: 20220301950Abstract: A method of manufacturing a semiconductor wafer is disclosed. The method includes exposing the semiconductor wafer to one or more dopant species to form one or more first implant layers on the semiconductor wafer, testing one or more geometric parameter values of the formed one or more first implant layers, after testing the one or more geometric parameter values, conditionally exposing the semiconductor wafer to one or more dopant species to form one or more additional implant layers on the semiconductor wafer, after forming the one or more additional implant layers, conditionally forming one or more additional circuit layers on the semiconductor wafer to form a plurality of functional electronic circuits on the semiconductor wafer, and conditionally testing the semiconductor wafer with a wafer acceptance test (WAT) operation.Type: ApplicationFiled: September 1, 2021Publication date: September 22, 2022Inventors: Feng-Chien Hsieh, Ting-Hao Chang, Chun-Hao Lin, Yun-Wei Cheng, Kuo-Cheng Lee
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Memory device with oxide semiconductor static random access memory and method for operating the same
Patent number: 10410684Abstract: The present invention provides a memory device, the memory device includes a first region having a plurality of oxide semiconductor static random access memories (OSSRAM) arranged in a first direction, and each of the OSSRAMs comprising a static random access memory (SRAM) and at least an oxide semiconductor dynamic random access memory (DOSRAM), wherein the DOSRAM is connected to the SRAM, wherein each of the DOSRAMs comprises an oxide semiconductor gate (OSG), and each of the OSGs extending in a second direction perpendicular to the first direction, and an oxide semiconductor channel extending in the first direction, an oxide semiconductor gate connection extending in the first direction to connect each of the OSGs, and a word line, a Vcc connection line and a Vss connection line extend in the first direction and are connected to the SRAMs in each OSSRAM.Type: GrantFiled: February 21, 2018Date of Patent: September 10, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Yen Tseng, Ting-Hao Chang, Ching-Cheng Lung, Yu-Tse Kuo, Shih-Hao Liang, Chun-Hsien Huang, Shu-Ru Wang, Hsin-Chih Yu -
MEMORY DEVICE WITH OXIDE SEMICONDUCTOR STATIC RANDOM ACCESS MEMORY AND METHOD FOR OPERATING THE SAME
Publication number: 20190221238Abstract: The present invention provides a memory device, the memory device includes a first region having a plurality of oxide semiconductor static random access memories (OSSRAM) arranged in a first direction, and each of the OSSRAMs comprising a static random access memory (SRAM) and at least an oxide semiconductor dynamic random access memory (DOSRAM), wherein the DOSRAM is connected to the SRAM, wherein each of the DOSRAMs comprises an oxide semiconductor gate (OSG), and each of the OSGs extending in a second direction perpendicular to the first direction, and an oxide semiconductor channel extending in the first direction, an oxide semiconductor gate connection extending in the first direction to connect each of the OSGs, and a word line, a Vcc connection line and a Vss connection line extend in the first direction and are connected to the SRAMs in each OSSRAM.Type: ApplicationFiled: February 21, 2018Publication date: July 18, 2019Inventors: Chun-Yen Tseng, Ting-Hao Chang, Ching-Cheng Lung, Yu-Tse Kuo, Shih-Hao Liang, Chun-Hsien Huang, Shu-Ru Wang, Hsin-Chih Yu -
Patent number: 10032777Abstract: An array of dynamic random access memory cells includes a first set of memory cell pairs in a first row, a second set of memory cells in a second row, and a first set of bit line contacts in the first row. The second set of memory cell pairs are disposed adjacent to the first set of memory cell pairs, and each two of the memory cell pairs in the second row include a common S/D region. Each of the first set of bit line contacts is electrically coupled to each of the common S/D regions of the memory cell pairs in the second row respectively.Type: GrantFiled: June 5, 2017Date of Patent: July 24, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hsin-Wen Chen, Chi-Chang Shuai, Hung-Chan Lin, Ting-Hao Chang, Hsien-Hung Tsai
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Publication number: 20180075136Abstract: The invention provides method and associated processor for adaptive linkify of a text. The method may include: by a processor, modifying a current search criterion according to an adaptable factor, searching for match of the modified search criterion in the text, and enabling found match of the modified search criterion to be clickable. The adaptable factor may reflect at least one of the following: a locale setting of the device, a location of the device, manual setting, reachability, linguistic analysis result and system learning result.Type: ApplicationFiled: September 12, 2016Publication date: March 15, 2018Inventors: Cheng-Hung Ko, Ting-Hao Chang
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Patent number: 9001571Abstract: A 6T static random access memory cell, array, and memory thereof are provided, in which the memory cell includes a first inverter, a second inverter, a first access transistor, and a second access transistor. The first inverter and second inverter respectively include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor and a second pull-down transistor. The first pull-down and pull-up transistors each have a drain terminal mutually coupled to form a first node. The second pull-down and pull-up transistors each have a drain terminal mutually coupled to form a second node. The first and second access transistors each have a gate terminal respectively coupled to a first word line and a second word line. When the first word line provides on signals to turn on the first access transistor, the second low voltage supply provides a first differential voltage simultaneously.Type: GrantFiled: January 20, 2014Date of Patent: April 7, 2015Assignee: National Tsing Hua UniversityInventors: Meng-Fan Chang, Chien-Fu Chen, Ting-Hao Chang, Hiroyuki Yamauchi
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Patent number: 8078098Abstract: A multi-path data dissemination method for a magnetic diffusion wireless network and a system thereof overcome environmental interferences in wireless data transmissions. Each node of the network is provided for figuring out its good neighbors by broadcasting a good-neighbor exploratory message in a bootstrap process. Each node keeps a good-neighbor table containing nodes with a RSSI higher than a threshold of the good-neighbor table. A magnetic field of a magnetic diffusion (MD) dissemination method capable of determining a data dissemination path is created according to the good-neighbor tables to ensure that the data can be forwarded to a data sink successfully.Type: GrantFiled: October 29, 2009Date of Patent: December 13, 2011Assignee: National Taiwan UniversityInventors: Polly Huang, Tsung-Han Lin, Shu-Yu Hu, Ting-Hao Chang, Shin-Lung Huang, I-Hei Wu, Seng-Yong Lau
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Publication number: 20100304662Abstract: A multi-path data dissemination method for a magnetic diffusion wireless network and a system thereof overcome environmental interferences in wireless data transmissions. Each node of the network is provided for figuring out its good neighbors by broadcasting a good-neighbor exploratory message in a bootstrap process. Each node keeps a good-neighbor table containing nodes with a RSSI higher than a threshold of the good-neighbor table. A magnetic field of a magnetic diffusion (MD) dissemination method capable of determining a data dissemination path is created according to the good-neighbor tables to ensure that the data can be forwarded to a data sink successfully.Type: ApplicationFiled: October 29, 2009Publication date: December 2, 2010Applicant: NATIONAL TAIWAN UNIVERSITYInventors: Polly Huang, Tsung-Han Lin, Shu-Yu Hu, Ting-Hao Chang, Shin-Lung Huang, I-Hei Wu, Seng-Yong Lau