Patents by Inventor Tinghao Wang

Tinghao Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11264249
    Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: March 1, 2022
    Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.
    Inventors: Fen Dai, Tinghao Wang, Oliver D. Jan, Moo-Hyun Kim, Shawming Ma, Zhongming Liu
  • Publication number: 20200194277
    Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Inventors: Fen Dai, Tinghao Wang, Oliver D. Jan, Moo-Hyun Kim, Shawming Ma, Zhongming Liu
  • Patent number: 8207466
    Abstract: The present invention relates generally to pushbutton actuators. More particularly, the invention encompasses a pushbutton 2 position twist release switch with integral LED and actuator. The invention also includes a pushbutton 3 position momentary switch with an integral LED and actuator. Another embodiment of the invention relates to a pushbutton 3 position maintained switch with an integral LED and actuator. The invention also includes various embodiments of the inventive pushbutton actuator of this invention. The inventive pushbutton also comprises a pushbutton knob that has ridges for the transmission and scattering of light for the LED in the module.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: June 26, 2012
    Assignee: Siemens Industry, Inc.
    Inventors: Neeraj Singh, Tinghao Wang, Li-Chih Ree, Xinhua Chen
  • Publication number: 20090078548
    Abstract: The present invention relates generally to pushbutton actuators. More particularly, the invention encompasses a pushbutton 2 position twist release switch with integral LED and actuator. The invention also includes a pushbutton 3 position momentary switch with an integral LED and actuator. Another embodiment of the invention relates to a pushbutton 3 position maintained switch with an integral LED and actuator. The invention also includes various embodiments of the inventive pushbutton actuator of this invention. The inventive pushbutton also comprises a pushbutton knob that has ridges for the transmission and scattering of light for the LED in the module.
    Type: Application
    Filed: September 22, 2008
    Publication date: March 26, 2009
    Applicant: Siemens Energy & Automation, Inc.
    Inventors: Neeraj Singh, Tinghao Wang, Li-Chih Roland Ree, Xinhua Chen
  • Publication number: 20060110889
    Abstract: According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a layer of silicon nitride on the first interconnect layer. The layer of silicon nitride is deposited in a deposition process using an ammonia-to-silane ratio of at least 12.5. The method further includes depositing a layer of MIM capacitor metal on the layer of silicon nitride. The method further includes etching the layer of MIM capacitor metal to form an upper electrode of the MIM capacitor. According to this exemplary embodiment, the method further includes etching the layer of silicon nitride to form a MIM capacitor dielectric segment and etching the first interconnect metal layer to form a lower electrode of the MIM capacitor. The MIM capacitor has a capacitance density of at least 2.0 fF/um2.
    Type: Application
    Filed: November 23, 2004
    Publication date: May 25, 2006
    Inventors: Dieter Dornisch, Kenneth Ring, Tinghao Wang, David Howard, Guangming Li